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In solid-state physics, the tight binding model is an approach to the calculation of electronic band structure using an approximate set of wave functions based upon superposition of wave functions for isolated atoms located at each atomic site. The method is closely related to the linear combination of atomic orbitals molecular orbital method used for molecules. Tight binding calculates the ground state electronic energy and position of band gaps for a molecule.
Learn more about quantum dots from the many resources on this site, listed below. More information on Tight binding can be found here.
Lecture 2: Graphene Fundamentals
22 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta
Network for Computational Nanotechnology,
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.
This lecture provides a very high level overview of quantum dots. The main issues and...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO3D. The items discussed are:
Modeling Agenda and Motivation
Tight-Binding Motivation and basic formula...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Thermoelectric effects in semiconductor nanostructures: Role of electron and lattice properties
06 Oct 2010 | Online Presentations | Contributor(s): Abhijeet Paul, Gerhard Klimeck
This presentation covers some aspects of present development in the field of thermoelectricity and focuses particularly on the silicon nanowires as potential thermoelectric materials. The...