Tags: tight-binding


In solid-state physics, the tight binding model is an approach to the calculation of electronic band structure using an approximate set of wave functions based upon superposition of wave functions for isolated atoms located at each atomic site. The method is closely related to the linear combination of atomic orbitals molecular orbital method used for molecules. Tight binding calculates the ground state electronic energy and position of band gaps for a molecule.

Learn more about quantum dots from the many resources on this site, listed below. More information on Tight binding can be found here.

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  1. 1D Heterostructure Tool

    04 Sep 2008 | Tools | Contributor(s): Arun Goud Akkala, Sebastian Steiger, Jean Michel D Sellier, Sunhee Lee, Michael Povolotskyi, Tillmann Christoph Kubis, Hong-Hyun Park, Samarth Agarwal, Gerhard Klimeck, James Fonseca, Archana Tankasala, Kuang-Chung Wang, Chin-Yi Chen, Fan Chen

    Poisson-Schrödinger Solver for 1D Heterostructures


  2. ABACUS Exercise: Bandstructure – Kronig-Penney Model and Tight-Binding Exercise

    20 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    The objective of this exercise is to start with the simple Kronig-Penney model and understand formations of bands and gaps in the dispersion relation that describes the motion of carriers in 1D...


  3. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...


  4. Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms

    14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Timothy Boykin

    The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of...


  5. Band Structure Lab Demonstration: Bulk Strain

    12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.


  6. Bismide Semiconductors: Revolutionising Telecom Lasers

    19 Oct 2015 | Papers | Contributor(s): Muhammad Usman, Christopher A Broderick, Eoin P O'reilly

    Today’s telecomm lasers are plagued with Auger-related losses, which significantly reduce their efficiency and make device cooling essential. We are proposing a radical change in the laser...


  7. Carbon nanotube bandstructure

    22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

    Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon ...


  8. CGTB

    16 Jun 2006 | Tools | Contributor(s): Gang Li, Yang Xu, Narayan Aluru

    Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model


  9. Computational Nanoscience, Lecture 17: Tight-Binding, and Moving Towards Density Functional Theory

    24 Mar 2008 | Teaching Materials | Contributor(s): Elif Ertekin, Jeffrey C Grossman

    The purpose of this lecture is to illustrate the application of the Tight-Binding method to a simple system and then to introduce the concept of Density Functional Theory. The motivation to...


  10. Gerhard Klimeck

    Gerhard Klimeck is the Reilly Director of the Center for Predictive Materials and Devices (c-PRIMED) and the Network for Computational Nanotechnology (NCN) and a Professor of Electrical and...


  11. High Precision Quantum Control of Single Donor Spins in Silicon

    14 Jan 2008 | Papers | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg

    The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis...


  12. Lecture 2: Graphene Fundamentals

    22 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta

    Network for Computational Nanotechnology, Intel Foundation


  13. Mahesh R Neupane

    Though Mahesh hails from Nepal, he graduated with a Bachelors of Engineering (BE)degree in Computer Science from University of Madras, India, in 2003. In 2005, he received a MS degree in Computer...


  14. Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs

    09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry...


  15. Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements

    20 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    This presentation provides a very high level software overview of NEMO1D. Learning Objectives: This lecture provides a very high level overview of quantum dots. The main issues and...


  16. Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool

    04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    This presentation provides a very high level software overview of NEMO3D. The items discussed are: Modeling Agenda and Motivation Tight-Binding Motivation and basic formula...


  17. Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD

    04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman

    This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....


  18. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...


  19. OMEN Nanowire

    15 Dec 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure


  20. OMEN Nanowire Demonstration: Nanowire Simulation and Analysis

    11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.