Due to local system maintenance on Tuesday, September 27th, nanoHUB will be unable to launch simulation jobs on clusters conte, rice, carter, and hansen. We apologize for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
In solid-state physics, the tight binding model is an approach to the calculation of electronic band structure using an approximate set of wave functions based upon superposition of wave functions for isolated atoms located at each atomic site. The method is closely related to the linear combination of atomic orbitals molecular orbital method used for molecules. Tight binding calculates the ground state electronic energy and position of band gaps for a molecule.
Learn more about quantum dots from the many resources on this site, listed below. More information on Tight binding can be found here.
1D Heterostructure Tool
3.0 out of 5 stars
04 Sep 2008 | Tools | Contributor(s): Arun Goud Akkala, Sebastian Steiger, Jean Michel D Sellier, Sunhee Lee, Michael Povolotskyi, Tillmann Christoph Kubis, Hong-Hyun Park, Samarth Agarwal, Gerhard Klimeck, James Fonseca, Archana Tankasala, Kuang-Chung Wang, Chin-Yi Chen, Fan Chen
Poisson-Schrödinger Solver for 1D Heterostructures
ABACUS Exercise: Bandstructure – Kronig-Penney Model and Tight-Binding Exercise
20 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to start with the simple Kronig-Penney model and understand formations of bands and gaps in the dispersion relation that describes the motion of carriers in 1D...
ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
0.0 out of 5 stars
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Timothy Boykin
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of...
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
Bismide Semiconductors: Revolutionising Telecom Lasers
19 Oct 2015 | Papers | Contributor(s): Muhammad Usman, Christopher A Broderick, Eoin P O'reilly
Today’s telecomm lasers are plagued with Auger-related losses, which significantly reduce their efficiency and make device cooling essential. We are proposing a radical change in the laser...
Carbon nanotube bandstructure
22 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon ...
5.0 out of 5 stars
16 Jun 2006 | Tools | Contributor(s): Gang Li, Yang Xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
Computational Nanoscience, Lecture 17: Tight-Binding, and Moving Towards Density Functional Theory
24 Mar 2008 | Teaching Materials | Contributor(s): Elif Ertekin, Jeffrey C Grossman
The purpose of this lecture is to illustrate the application of the Tight-Binding method to a simple system and then to introduce the concept of Density Functional Theory. The motivation to...
High Precision Quantum Control of Single Donor Spins in Silicon
14 Jan 2008 | Papers | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis...
Lecture 2: Graphene Fundamentals
22 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta
Network for Computational Nanotechnology,
Mahesh R Neupane
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.
This lecture provides a very high level overview of quantum dots. The main issues and...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO3D. The items discussed are:
Modeling Agenda and Motivation
Tight-Binding Motivation and basic formula...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
15 Dec 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.