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How does the tool compute the transverse effective mass for bulk si bandstructure
Closed | Responses: 1
How does the tool compute the transverse effective mass for bulk Si?
Indirect to direct transition of the bandstructure
I am trying to simulate the Si-channel UTB SOI .I hope to see the transition from indirect band-gap to direct band-gap as go for thicknesses below 3 nm. But I find the...
Can we increase the limit of k-space region from 0,0 to
I want to simulate the Ultra-thin body Silicon for [0,0] to [1,0] instead of [0,0] to [0.5,0] in k-space.I am unable to change that manually.Please can you help me out?
how can i save the files to my computer? i use the download on the right corner and i click save. but i cant find it again
Band structure error in InAs UTB devices
Closed | Responses: 0
first of all, I would like to thank you to have developed and made available online this tool.
Currently, I’m interested in the study of the band structure of http://nanohub.org/answers/question/1328
Exit code 139
GaAs with biaxial strain, swept from -3% to +3% produces the following error:
Problem launching job: Program...
Confinement Effective mass
I am interested in calculating the effective mass along the confinement direction for nanowire geometries. Can this be done using Bandstrlab or is there another tool for it?
Abnormal Termination of DGMOS UTB Self-Consistent Simulation
When running an Ultra-thin body MOSFET simulation with the job type set to “Calculate the UTB band-structure self consistently http://nanohub.org/answers/question/1100
2% biaxial strain Ge, promen at the Gamma point
When I simulate the bandstructure of Ge with high strain (2%), I get a discontinuity at the Gamma point, and therefore the effective masses are not correctly calculated. Can you...
L point on bulk central bands and bulk (all) band structure plots appears truncated
When simulating the bulk band structure for GaAs and Si (I haven’t tried others), I noticed that the L...
The results for strained Si nanowire are different with the other literature
The obtained results for strained silicon nanowire are different with other literature.
The energy difference between the minimum of light and heavy bands should be decreased in...
Self Consistent for Ge DGMOS
I am currently trying to simulate the Band structure for a Ge DGMOS (with thickness 4nm) using self consistent calculation at a particular Bias Voltage. However the simulator is unable to...
what kind of new research can be done by this tool? any exercise? in details..plz
can we simulate the band structure of graphene?
Why do I not see option for choosing different crystal directions for bulk materials?
Does simulation assume 300K?
Is it possible to calculate band structure at different temp?
No output for self-consistent calculation
I ran the tool for self-consistent calculation but I didn’t obtain any result. It seems the tool does not work for this type of job. However, for non-self-consistent it works...
differences between sp3s* and sp3d5s* models
In this version of bandstrlab, the sp3s* model is not implemented (there is only one model, i.e. the sp3d5s*). It would be interesting to have that model to compare the differences between the...
Strain Tight-Binding model
I would like to know how this tool accounts the strain in TB Hamiltonian. Does it alter both the on-site and off diagonals elements?
I would truly appreciate if you could help me out.
Bulk Si eff. mass vs. biaxial Strain
Closed | Responses: 2
I was simulating Strain sweep on Bulk Si. I applied biaxial strain from -0.015 to 0.015 in http://nanohub.org/answers/question/832