Can you please tell me the working of CNTFET. It seems a bit confusing to me. what type of cntfet do you use? SB or gate doped?

Closed | Responses: 0

https://nanohub.org/answers/question/1078

How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal?

Closed | Responses: 2

https://nanohub.org/answers/question/416

i can't find output in simulation of cntfet

Open | Responses: 2

hi sir , i can't find output in simulation of cntfet, i want to have IV curves in result of simulation , plz help me.

https://nanohub.org/answers/question/20

is there a problem with the simulator?

Closed | Responses: 1

hi, I tried to get some I-V curves but I couldnt (even with default settings)I just get values of drain source or gate voltage and there is not any curve, just the values..

https://nanohub.org/answers/question/459

what can i use simulator on line

Closed | Responses: 1

https://nanohub.org/answers/question/190

What is the Diameter of the nanotube in this simulation?

Open | Responses: 1

What is the Diameter of the nanotube in this simulation? I can not find the value in the parameters-setting part.

https://nanohub.org/answers/question/167

what is the threshold voltage

Closed | Responses: 3

for simulation of CNTFET what is the exact value of the threshold voltage? how does this depends on the device parameters.

https://nanohub.org/answers/question/450

Where, why, and how you used Dyson equation

Open | Responses: 1

It's mentioned that Dyson equation is used. Would you please let me know in which part you used Dyson equation. Which part of Hamiltonian considered as perturbation and why? I couldn't find it in the …

https://nanohub.org/answers/question/902

why I~vds curve shows higher saturation current for longer channel length?

Open | Responses: 1

I was simulating for CNTFETs with different channel length.I had taken a (10,0) CNT.I tried to plot I~vds curve for channel lengths 10nm,15nm and 30nm.saturation current for 10nm is coming higher …

https://nanohub.org/answers/question/200

Why the effect of temperature is different at on and off-state current?

Open | Responses: 1

For V(drain)=0.1V or 0.4V and V(gate)=0V, by increasing the temperature (300ºk, 400ºk, 500ºk) the current (off-state current) increases. Such behavior can be seen for V(drain)=0.4V and V(gate)=1V …

https://nanohub.org/answers/question/872

why the saturation current increases with decrease in diameter of the CNT

Closed | Responses: 3

I had done the simulation using your tool “CNTFET Lab” available at nanohub. I have done the simulations for different diameter of the CNT (by changing the chirality) used in the channel. The …

https://nanohub.org/answers/question/866