Tags: tool:cntfet

Questions & Answers (1-11 of 11)

  1. Can you please tell me the working of CNTFET. It seems a bit confusing to me. what type of cntfet do you use? SB or gate doped?

    Closed | Responses: 0

    http://nanohub.org/answers/question/1078

  2. How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal?

    Closed | Responses: 2

    http://nanohub.org/answers/question/416

  3. i can’t find output in simulation of cntfet

    Open | Responses: 2

    hi sir , i can’t find output in simulation of cntfet, i want to have IV curves in result of simulation , plz help me.

    http://nanohub.org/answers/question/20

  4. is there a problem with the simulator?

    Closed | Responses: 1

    hi, I tried to get some I-V curves but I couldnt (even with default settings)I just get values of drain source or gate voltage and there is not any curve, just the values..

    http://nanohub.org/answers/question/459

  5. NO RESULTS APPEAR

    Closed | Responses: 0

    Hello.

    I have simulated the CNTFET lab but the graph did not appear.

     

    Thank you

    http://nanohub.org/answers/question/1591

  6. What is the Diameter of the nanotube in this simulation?

    Open | Responses: 1

    What is the Diameter of the nanotube in this simulation? I can not find the value in the parameters-setting part.

    http://nanohub.org/answers/question/167

  7. what is the threshold voltage

    Closed | Responses: 3

    for simulation of CNTFET what is the exact value of the threshold voltage? how does this depends on the device parameters.

    http://nanohub.org/answers/question/450

  8. Where, why, and how you used Dyson equation

    Open | Responses: 1

    It’s mentioned that Dyson equation is used. Would you please let me know in which part you used Dyson equation. Which part of Hamiltonian considered as perturbation and why? I...

    http://nanohub.org/answers/question/902

  9. why I~vds curve shows higher saturation current for longer channel length?

    Open | Responses: 1

    I was simulating for CNTFETs with different channel length.I had taken a (10,0) CNT.I tried to plot I~vds curve for channel lengths 10nm,15nm and 30nm.saturation current for 10nm is coming...

    http://nanohub.org/answers/question/200

  10. Why the effect of temperature is different at on and off-state current?

    Open | Responses: 1

    For V(drain)=0.1V or 0.4V and V(gate)=0V, by increasing the temperature (300ºk, 400ºk, 500ºk) the current (off-state current) increases. Such behavior can be seen for V(drain)=0.4V and...

    http://nanohub.org/answers/question/872

  11. why the saturation current increases with decrease in diameter of the CNT

    Closed | Responses: 5

    I had done the simulation using your tool “CNTFET Lab” available at nanohub. I have done the simulations for different diameter of the CNT (by changing the chirality) used in the channel....

    http://nanohub.org/answers/question/866