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Can you please tell me the working of CNTFET. It seems a bit confusing to me. what type of cntfet do you use? SB or gate doped?
Closed | Responses: 0
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13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal?
Closed | Responses: 2
i can't find output in simulation of cntfet
Open | Responses: 2
hi sir , i can't find output in simulation of cntfet, i want to have IV curves in result of simulation , plz help me.
is there a problem with the simulator?
Closed | Responses: 1
hi, I tried to get some I-V curves but I couldnt (even with default settings)I just get values of drain source or gate voltage and there is not any curve, just the values..
Neophytos Neophytou is a postdoctoral research scientist at the Technical University of Vienna since August 2008. Neophytos Neophytou received his B. S. degree in Electrical and Computer …
Shaikh S. Ahmed
Shaikh Shahid Ahmed received the B.S. degree in electrical and electronic engineering from Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, in 1998, and the M.S. and …
what can i use simulator on line
What is the Diameter of the nanotube in this simulation?
Open | Responses: 1
What is the Diameter of the nanotube in this simulation? I can not find the value in the parameters-setting part.
what is the threshold voltage
Closed | Responses: 3
for simulation of CNTFET what is the exact value of the threshold voltage? how does this depends on the device parameters.
Where, why, and how you used Dyson equation
It's mentioned that Dyson equation is used. Would you please let me know in which part you used Dyson equation. Which part of Hamiltonian considered as perturbation and why? I couldn't find it in the …
why I~vds curve shows higher saturation current for longer channel length?
I was simulating for CNTFETs with different channel length.I had taken a (10,0) CNT.I tried to plot I~vds curve for channel lengths 10nm,15nm and 30nm.saturation current for 10nm is coming higher …
Why the effect of temperature is different at on and off-state current?
For V(drain)=0.1V or 0.4V and V(gate)=0V, by increasing the temperature (300ºk, 400ºk, 500ºk) the current (off-state current) increases. Such behavior can be seen for V(drain)=0.4V and V(gate)=1V …
why the saturation current increases with decrease in diameter of the CNT
I had done the simulation using your tool “CNTFET Lab” available at nanohub. I have done the simulations for different diameter of the CNT (by changing the chirality) used in the channel. The …
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