Questions & Answers (1-20 of 27)

1. what does electric field at initial bias na d electric field at final bias mean ?

   Q&A|Closed | Responses: 2

   https://nanohub.org/answers/question/2709

2. why are there two lines in V-I characteristics of the simulation results?

   Q&A|Closed | Responses: 0

   https://nanohub.org/answers/question/2692

3. How do you vary the gate to source voltage?

   Q&A|Open | Responses: 1

   https://nanohub.org/answers/question/2529

4. How can i calculate DIBL from the simulation?

   Q&A|Closed | Responses: 1

   https://nanohub.org/answers/question/2417

5. How can I tell if MOSFET failed to converge?

   Q&A|Open | Responses: 1

   How can I tell if MOSFET failed to converge?

   https://nanohub.org/answers/question/2346

6. Unable to obtain exclusive lock on CTF directo

   Q&A|Closed | Responses: 0

   During simulation(when it's about 80% done), multiple red lines start popping up saying 'unable to obtain exclusive lock on CTF directo...'

   And the Id-Vg curves and...

   https://nanohub.org/answers/question/2210

7. MOSFET

   Q&A|Closed | Responses: 0

   Box layer thickness and body thickness are changed what functions are used ?

   https://nanohub.org/answers/question/2128

8. How to specify drain, source and substrate voltages separately?

   Q&A|Closed | Responses: 0

   Hi!

   I am looking at simulating SOI pMOS, is there a way to set drain, source, and substrate biases? In the simulator you mention also that the substrate is tied to the source, but...

   https://nanohub.org/answers/question/2075

9. Simulation of dual material gate MOSFET

   Q&A|Closed | Responses: 0

   How can I simulate dual matererial double gate? If I want to simulate double gate FET with graded channel, which tool should I use?

   https://nanohub.org/answers/question/1876

10. what is the difference between substrate and channel, isn't in bulk mosfet there is only one substrate?

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1856

11. How does this simulator considers electron effective mass in its modeling?

    Q&A|Closed | Responses: 0

    I want to know how electron effective mass is considered for the simulation model for DG MOSFET.

    https://nanohub.org/answers/question/1728

12. How to measure the thresold and leakage current for MOSFET

    Q&A|Closed | Responses: 1

        Hello there, 

    Is there any guide or manual which we can refer to get the values for the threshold, as it is a very specific towards the technology it would be...

    https://nanohub.org/answers/question/1605

13. Convergence problem, take smaller steps

    Q&A|Closed | Responses: 0

    I receive this error when running the MOSFET tool. Any one can suggest a solution

    https://nanohub.org/answers/question/1488

14. how can i plot conduction band along the semiconductor surface from source to drian

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1147

15. how can i get the device description of double gate MOS

    Q&A|Closed | Responses: 0

    https://nanohub.org/answers/question/1014

16. How to provide parameter values for SOI MOSFET simulation

    Q&A|Closed | Responses: 1

    https://nanohub.org/answers/question/876

17. Running impact ionization

    Q&A|Closed | Responses: 1

    I seem to get a blank plot. When I change to the Energy_balance model I get an error.

    https://nanohub.org/answers/question/641

18. How do you determine the threshold bias from this simulation?

    Q&A|Open | Responses: 2

    https://nanohub.org/answers/question/529

19. Can I save the results of a MOSFET run and come back later to reuse and continue the study?

    Q&A|Closed | Responses: 1

    https://nanohub.org/answers/question/482

20. Can I save the results of a MOSFET run and come back later to reuse and continue the study?

    Q&A|Closed | Responses: 1

    https://nanohub.org/answers/question/481