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How does this simulator considers electron effective mass in its modeling?
Closed | Responses: 0
I want to know how electron effective mass is considered for the simulation model for DG MOSFET.
How to measure the thresold and leakage current for MOSFET
Closed | Responses: 1
Is there any guide or manual which we can refer to get the values for the threshold, as it is a very specific towards the technology it would be...
Convergence problem, take smaller steps
I receive this error when running the MOSFET tool. Any one can suggest a solution
how can i plot conduction band along the semiconductor surface from source to drian
how can i get the device description of double gate MOS
How to provide parameter values for SOI MOSFET simulation
Running impact ionization
I seem to get a blank plot.
When I change to the Energy_balance model I get an error.
How do you determine the threshold bias from this simulation?
Open | Responses: 2
Can I save the results of a MOSFET run and come back later to reuse and continue the study?
Obtaining simulation data
Open | Responses: 1
Is there a way to obtain a file that contains
the data plotted in the output plots in the
form of (x,y) pairs of data points ?
(to be used in one’s own plotting tool).
how to include other than gaussian doping density in the tool
how to do channel tapering
how this soi generated by giving different parameters included in spice for digital /analog design
how to include different materials in sio2
how to place n+ or p+ material over gate as it is done by IIT, delhi professor
how nanohub differentiate between mask length (Lmask) and effective length (Leff) for MOSFET
Short channel modeling using this tool?
The simulation doesn’t seem to model short channel effects. When I simulated IV (Id-VG and Id-Vd) for 70nm, 55nm, and 50nm drawn L, I hardly got any difference in the values?