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Whether the version 2 do the quantum correction for hole in the accumulation region?
Closed | Responses: 0
I just want to ask that whether the version 2 do the quantum correction for hole in the accumulation region?(MOSCAP)When I check the total charge density, I found that the...
schred-1.0 does not account for doping/Temp effects on VFB in DG
I do not noticeable changes when using intrinsic 1E10cm-3 or heavily doped 1E18cm-3 in simulation of metal-DG structures. The same happens when changing temprerature
I would excpect...
I am confused regarding the Material Parameter Inputs. The notation in the input deck is extremely confusing.
Closed | Responses: 1
The input deck has mx_3valleys (valley 1, valley 2, valley 3), my_3valleys (valley 1, valley 2, valley 3), mz_3valleys (valley 1, valley 2, valley 3), mhh_3valleys (valley 1, valley 2, valley...
Can i use it for graphene FET simulation to calculate potential distribution in one dimension?
Closed | Responses: 2
I would appreciate if somebody gives me instruction for SCHRED compilation in windows.
I also have an ORACLE Virtualbox and I could compile it there, if I knew how.
Thanks in advance.
Schred v1: other materials
In Schred V1 there is an option for “other” materials. When this is selected I can input effective masses and band offsets.
How is this different from Schred V2, which asks...
simulating InAs in Schred V1 vs V2
Open | Responses: 1
In version 2, I tried the following parameters for InAs:
L-valley energy offset: 0.73
x5 larger Ctot than Cox in QM schred V2
Open | Responses: 2
I found that the QM with Fermi-statistics in Schred V2 gives five times larger Ctot than Cox when I have tox=0.73 nm and NA=7e18 (and other parameters as defaults except I changed...
Boltzmann statistics does not work
I tried baltzmann statistics for QM or SC. Both did not work.
Could you please fix it?
Including bulk doping when simulating QM accumulation capacitance in Schred V1
Through examination of the source code I have figured out that I need to use the “accumula=yes” flag in the “calc” section of the input file to get Schred V1 to include...
Schred V2: Simulating n-type substrates and Vfb determination
Using the compiled Schred V2 code and supplied sample input files I am able to successfully model structures with a uniformly doped p-type Si substrate. I assume that to model an n-type...
Input file syntax for Schred V2
I have downloaded and compiled the source code for versions 1 and 2 of Schred. However, I am having trouble finding information on the input file syntax for version 2. The...
How to find Vox = f(Vg)
I used this SHRED before to generate Vox=f(Vg)of a MOS, as Vg is swept from -V to +V, but am struggling to find the way of how to do it with this new interface.
Parameters for GaAs
I just wondering the parameters or the refernce for calculation of GaAs in Schred.
Including the orientation,...
How to simulate DGMOS with schred 2.0 tool?
Exactly same subband energies for 2 ladders
I am simulating DG MOSCAP with Metal gates.
Metal1 and 2 WF – 4.3eV
Voltage – 0 to 4 V
schred running ok?
The CV for very thin oxide (considering only G vs considering GLX) on GaAs seems to be exactly similar. Which...
Schred for non uniform doping?
Is there support for non uniform doping profile for Schred? I’m interested in using inverse modeling of CV to extract the doping profile. I have a situation of a very shallow N+ region...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Schred Tutorial Version 2.1
0.0 out of 5 stars
23 Jun 2008 | Downloads | Contributor(s): Dragica Vasileska
This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate...