Specifying Shotkey Barrier Height for SB type GNRFET

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The Shotkey Barrier height is not the same for all GNRFETs (SB type) and will have a significant impact on IV curve. Of course the SB height will depend on the work function of the contact metal …

http://nanohub.org/answers/question/731

Is it possible to define a dual-gate CNTFET into TCAD Vides?

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Hello, I'm interested to simulate a Dual-gate CNTFET with two independent gates. The back-gate is wider than the front gate. The outer part of the device is controlled by the back gate while the …

http://nanohub.org/answers/question/636

multi-layered GNR

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Hi, I was trying to simulate a multi-layered GNR FET using Vides. However I did not find any way to include the number of layers either using graphical interface or inputdeck... Could you please …

http://nanohub.org/answers/question/489

Simulation of CNFET with multiple carbon nanotubes

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Dear Sir, I'm wishing to design a CNFET with multiple carbon nanotubes placed in parallel under the same gate. However, it seems that there's no parameter for adding more than one zig-zag SWCNTs …

http://nanohub.org/answers/question/486

Is it possible to simulate circuits made of various CNTs? (for instance logic gates)

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http://nanohub.org/answers/question/409

About Double Gate simulation

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Hello, I tried to simulate Double gate device, The front gate voltage is 1V and back gate voltage is -1 V, The device gate length is 30 nm. I swept drain voltage from 0.1 to 1V.... Even though, I …

http://nanohub.org/answers/question/389

code seems to crash with a message "Child Process Exited Abnormally"

Open | Responses: 2

I tried to run the default structure and also tried to sweep the drain voltage and get a message "Child Process Exited Abnormally"

http://nanohub.org/answers/question/290