
ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008   Contributor(s):: Muhammad A. Alam

ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008   Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008   Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.

ECE 612 Lecture 19: Device Variability
14 Nov 2008   Contributor(s):: Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.

ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.

Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008   Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...

Lecture 1: Percolation in Electronic Devices
04 Nov 2008   Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008   Contributor(s):: Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008   Contributor(s):: Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gateinduced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008   Contributor(s):: Mark Lundstrom
Outline:1) Effect on IV,2) Series resistance components,3) Metalsemiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.

ECE 612 Lecture 14: VT Engineering
28 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Deltafunction doping, xC = 0,4) Deltafunction doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how nonuniform doping profiles affect...

ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008   Contributor(s):: Mark Lundstrom
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.

ECE 612 Lecture 11: Effective Mobility
20 Oct 2008   Contributor(s):: Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.

ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
07 Oct 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.

Introductory Comments
29 Sep 2008   Contributor(s):: Muhammad A. Alam

Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008   Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...