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Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (161-180 of 234)

  1. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...

    http://nanohub.org/resources/5207

  2. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  3. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

    http://nanohub.org/resources/5362

  4. ECE 612 Lecture 1: 1D MOS Electrostatics I

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of some fundamentals, 2) Identify next steps.

    http://nanohub.org/resources/5341

  5. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...

    http://nanohub.org/resources/5308

  6. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...

    http://nanohub.org/resources/5311

  7. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...

    http://nanohub.org/resources/5312

  8. ECE 495N Lecture 2: Quantum of Conductance

    02 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/5355

  9. ECE 495N Lecture 1: What Makes Current Flow?

    28 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/5345

  10. Introduction: Physics of Nanoscale MOSFETs

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

    http://nanohub.org/resources/5317

  11. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...

    http://nanohub.org/resources/5307

  12. The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors

    03 Aug 2007 | Online Presentations | Contributor(s): Dave Lyzenga

    In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this...

    http://nanohub.org/resources/3044

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.