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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Online Presentations (121-140 of 166)

  1. ECE 659 Lecture 5: Where is the Resistance?

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    27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    https://nanohub.org/resources/6169

  2. ECE 659 Lecture 4: Landauer Model

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    27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    https://nanohub.org/resources/6166

  3. ECE 659 Lecture 1: Introduction

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    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    https://nanohub.org/resources/6145

  4. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

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    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    https://nanohub.org/resources/6148

  5. ECE 659 Lecture 3: Mobility

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    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    https://nanohub.org/resources/6151

  6. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

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    15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    https://nanohub.org/resources/6047

  7. ECE 612 Lecture 26: Heterostructure FETs

    This resource has a 8.8 Ranking

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    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    https://nanohub.org/resources/6032

  8. ECE 612 Lecture 25: SOI Electrostatics

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    08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.

    https://nanohub.org/resources/6014

  9. ECE 612 Lecture 22: CMOS Circuit Essentials

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    24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the …

    https://nanohub.org/resources/5927

  10. ECE 606 Lecture 32: MOS Electrostatics I

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    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5894

  11. ECE 606 Lecture 26: Schottky Diode II

    This resource has a 9.1 Ranking

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    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    …

    https://nanohub.org/resources/5830

  12. ECE 612 Lecture 18B: CMOS Process Flow

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    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete presentation …

    https://nanohub.org/resources/5855

  13. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

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    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    https://nanohub.org/resources/5861

  14. ECE 612 Lecture 19: Device Variability

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    14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

    https://nanohub.org/resources/5856

  15. ECE 612 Lecture 18A: CMOS Process Steps

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    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    https://nanohub.org/resources/5788

  16. Lecture 2: Thresholds, Islands, and Fractals

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    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via …

    https://nanohub.org/resources/5698

  17. Lecture 1: Percolation in Electronic Devices

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    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity …

    https://nanohub.org/resources/5697

  18. ECE 612 Lecture 17: Gate Resistance and Interconnects

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    03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

    https://nanohub.org/resources/5700

  19. ECE 612 Lecture 16: MOSFET Leakage

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    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    https://nanohub.org/resources/5688

  20. ECE 612 Lecture 15: Series Resistance (and effective channel length)

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    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    https://nanohub.org/resources/5675

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