Tags: transistors

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Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (1-20 of 238)

  1. Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach

    30 Aug 2017 | Online Presentations | Contributor(s): Rajib Rahman

    In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with...

    http://nanohub.org/resources/27210

  2. Directing Crystallization and Assembly for Printed Electronics

    19 Dec 2016 | Online Presentations | Contributor(s): Ying Diao

    Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using...

    http://nanohub.org/resources/25458

  3. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

    http://nanohub.org/resources/24336

  4. Multiscale Modeling of Graphene-Metal Contacts

    01 Feb 2016 | Online Presentations | Contributor(s): T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone

    IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this...

    http://nanohub.org/resources/22918

  5. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    http://nanohub.org/resources/20335

  6. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Papers | Contributor(s): Jun Huang

    PhD thesis of Jun Huang Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...

    http://nanohub.org/resources/20248

  7. ECE 612 Lecture 9: Subthreshold Conduction

    0.0 out of 5 stars 

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

    http://nanohub.org/resources/5617

  8. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    0.0 out of 5 stars 

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

    http://nanohub.org/resources/5618

  9. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  10. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...

    http://nanohub.org/resources/18867

  11. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  12. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  13. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  14. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    02 Jun 2013 | Online Presentations | Contributor(s): Xiuling Li

    …

    http://nanohub.org/resources/14040

  15. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16122

  16. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

    http://nanohub.org/resources/16121

  17. Engineering Disorder in Opto-Electronics

    05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency...

    http://nanohub.org/resources/16043

  18. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16055

  19. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15976

  20. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15977