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Tags: transistors

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Note: Results do not include pending, unpublished, and some private items.

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (1-20 of 230)

  1. Tunnel FETs - Device Physics and Realizations

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    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source …

    https://nanohub.org/resources/18723

  2. The Road Ahead for Carbon Nanotube Transistors

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    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to …

    https://nanohub.org/resources/18867

  3. Modeling Quantum Transport i Nanoscale Transistors

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    28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, …

    https://nanohub.org/resources/18744

  4. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

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    28 Jun 2013 | Publications | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes …

    https://nanohub.org/resources/18747

  5. Computational and Experimental Study of Transport in Advanced Silicon Devices

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    28 Jun 2013 | Publications | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to …

    https://nanohub.org/resources/18769

  6. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

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    02 Jun 2013 | Online Presentations | Contributor(s): Xiuling Li

    …

    https://nanohub.org/resources/14040

  7. ECE 606 Lecture 27: Looking Back and Looking Forward

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    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/16122

  8. ECE 606 Lecture 26: The Future of Computational Electronics

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    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

    https://nanohub.org/resources/16121

  9. Engineering Disorder in Opto-Electronics

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    05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency …

    https://nanohub.org/resources/16043

  10. ECE 606 Lecture 25: Modern MOSFETs

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    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/16055

  11. ECE 606 Lecture 21: MOS Electrostatics

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15976

  12. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15977

  13. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15978

  14. ECE 606 Lecture 24: MOSFET Non-Idealities

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    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15979

  15. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

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    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/15715

  16. ECE 606 Lecture 19: Bipolar Transistors Design

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    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

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    https://nanohub.org/resources/15714

  17. ECE 606 Lecture 18: Bipolar Transistors a) Introduction b) Design

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    05 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15713

  18. ECE 606 Lecture 17: Shottky Diode

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    29 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15658

  19. ECE 606 Lecture 16: p-n Diode AC Response

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    24 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    …

    https://nanohub.org/resources/15491

  20. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

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    24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device …

    https://nanohub.org/resources/5338

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