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Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (181-200 of 234)

  1. ECE 659 Lecture 1: Introduction

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6145

  2. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6148

  3. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6151

  4. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/6047

  5. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  6. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.

    http://nanohub.org/resources/6014

  7. ECE 612 Lecture 22: CMOS Circuit Essentials

    24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the...

    http://nanohub.org/resources/5927

  8. ECE 606 Lecture 32: MOS Electrostatics I

    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5894

  9. ECE 606 Lecture 26: Schottky Diode II

    19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5830

  10. ECE 612 Lecture 18B: CMOS Process Flow

    18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf. This lecture is a condensed version of the more complete...

    http://nanohub.org/resources/5855

  11. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    http://nanohub.org/resources/5861

  12. ECE 612 Lecture 19: Device Variability

    14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

    http://nanohub.org/resources/5856

  13. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Unit Process Operations, 2) Process Variations.

    http://nanohub.org/resources/5788

  14. ECE 606: Principles of Semiconductor Devices

    12 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

    In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making...

    http://nanohub.org/resources/5749

  15. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...

    http://nanohub.org/resources/5698

  16. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...

    http://nanohub.org/resources/5697

  17. ECE 612 Lecture 17: Gate Resistance and Interconnects

    03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

    http://nanohub.org/resources/5700

  18. Percolation Theory

    03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon-...

    http://nanohub.org/resources/5660

  19. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    http://nanohub.org/resources/5688

  20. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    http://nanohub.org/resources/5675

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