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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
ECE 606 Lecture 2: Geometry of Periodic Crystals
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28 Jan 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Volume & surface issues for BCC, FCC, Cubic latticesImportant material systemsMiller indices ConclusionsHelpful software tool: Crystal Viewer in the ABACUS tool suite.
ECE 606 Lecture 1: Introduction
Outline:Course information Current flow in semiconductors Types of material systems Classification of crystals
ECE 659 Quantum Transport: Atom to Transistor
27 Jan 2009 | | Contributor(s):: Supriyo Datta
Spring 2009 This is a newly produced version of the course that was formerly available. We would greatly appreciate your feedback regarding the new format and contents. Traditionally atomistic approaches have been used to model materials in terms of average parameters like the...
ECE 659 Lecture 5: Where is the Resistance?
ECE 659 Lecture 4: Landauer Model
ECE 659 Lecture 1: Introduction
21 Jan 2009 | | Contributor(s):: Supriyo Datta
ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
ECE 659 Lecture 3: Mobility
ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.
ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008 | | Contributor(s):: Muhammad A. Alam
ECE 606 Lecture 26: Schottky Diode II
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 612 Lecture 19: Device Variability
14 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.
ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
ECE 606: Principles of Semiconductor Devices
12 Nov 2008 | | Contributor(s):: Muhammad A. Alam
In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid...
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...