
ECE 659 Lecture 1: Introduction
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6145

ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6148

ECE 659 Lecture 3: Mobility
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6151

ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/6047

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Introduction,
2) Heterojunction review,
3) Modulation doping,
4) IV characteristics,
5) Device Structure / Materials,
6) Summary.
http://nanohub.org/resources/6032

ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1. Introduction,
2. General solution,
3. VTF vs. VGB,
4. Subthreshold slope,
5. Double gate (DG) SOI,
6. Recap,
7. Discussion,
8. Summary.
http://nanohub.org/resources/6014

ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
2) Speed,
3) Power,
4) Circuit performance,
5) Metrics,
6) Limits.
This lecture is an overview of CMOS circuits. For a more detailed presentation, the...
http://nanohub.org/resources/5927

ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5894

ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5830

ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete...
http://nanohub.org/resources/5855

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
http://nanohub.org/resources/5861

ECE 612 Lecture 19: Device Variability
14 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Sources of variability,
2) Random dopantfluctuations (RDF),
3) Line edge roughness (LER),
4) Impact on design.
http://nanohub.org/resources/5856

ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.
http://nanohub.org/resources/5788

ECE 606: Principles of Semiconductor Devices
12 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making...
http://nanohub.org/resources/5749

Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...
http://nanohub.org/resources/5698

Lecture 1: Percolation in Electronic Devices
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...
http://nanohub.org/resources/5697

ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Gate Resistance,
2) Interconnects,
3) ITRS,
4) Summary.
http://nanohub.org/resources/5700

Percolation Theory
03 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon...
http://nanohub.org/resources/5660

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.
http://nanohub.org/resources/5688

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Effect on IV,
2) Series resistance components,
3) Metalsemiconductor resistance,
4) Other series resistance components,
5) Discussion,
6) Effective Channel Length,
7) Summary.
http://nanohub.org/resources/5675