
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.
http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.
http://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
http://nanohub.org/resources/5311

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
http://nanohub.org/resources/5312

Nanoelectronics and the meaning of resistance: Course Handout and Exercises
02 Sep 2008  Teaching Materials  Contributor(s): Supriyo Datta
Handout with reference list, MATLAB scripts and exercise problems.
http://nanohub.org/resources/5358

ECE 495N Lecture 2: Quantum of Conductance
02 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5355

ECE 495N Lecture 1: What Makes Current Flow?
28 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5345

ECE 495N: Fundamentals of Nanoelectronics
28 Aug 2008  Courses  Contributor(s): Supriyo Datta
Fall 2008
This is a newly produced version of the course that was
formerly available.
We would greatly appreciate your feedback regarding the new format and contents.
Objective:
To...
http://nanohub.org/resources/5346

ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT
Fall 2008
This course...
http://nanohub.org/resources/5328

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
http://nanohub.org/resources/5317

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
http://nanohub.org/resources/5305

Physics of Nanoscale MOSFETs
26 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
http://nanohub.org/resources/5306

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and...
http://nanohub.org/resources/5307

Cylindrical CNT MOSFET Simulator
19 Aug 2008  Tools  Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2D electrons transport in CNTFET
http://nanohub.org/resources/moscntr

Quantum and Semiclassical Electrostatics Simulation of SOI Trigates
04 Mar 2008  Tools  Contributor(s): HyungSeok Hahm, Andres Godoy
Generate quantum/semiclassical electrostatic simulation results for a simple Trigate structure
http://nanohub.org/resources/MCTrigate

The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube FieldEffect Transistors
03 Aug 2007  Online Presentations  Contributor(s): Dave Lyzenga
In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this...
http://nanohub.org/resources/3044

The Transistor
13 Dec 2006  Teaching Materials  Contributor(s): Victor Hugo Estrada, Elizabeth Gardner
This is the third contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.
This PowerPoint presentation describes a brief...
http://nanohub.org/resources/2095