Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (221-239 of 239)

  1. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  2. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

  3. ECE 612 Lecture 1: 1D MOS Electrostatics I

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review of some fundamentals,2) Identify next steps.

  4. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

  5. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

  6. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

  7. Nanoelectronics and the meaning of resistance: Course Handout and Exercises

    02 Sep 2008 | | Contributor(s):: Supriyo Datta

    Handout with reference list, MATLAB scripts and exercise problems.

  8. ECE 495N Lecture 2: Quantum of Conductance

    02 Sep 2008 | | Contributor(s):: Supriyo Datta

  9. ECE 495N Lecture 1: What Makes Current Flow?

    28 Aug 2008 | | Contributor(s):: Supriyo Datta

  10. ECE 495N: Fundamentals of Nanoelectronics

    28 Aug 2008 | | Contributor(s):: Supriyo Datta

    Fall 2008This is a newly produced version of the course that wasformerly available.We would greatly appreciate your feedback regarding the new format and contents.Objective:To convey the basic concepts of nanoelectronics to electricalengineering students with no background in quantum mechanics...

  11. ECE 612: Nanoscale Transistors (Fall 2008)

    27 Aug 2008 | | Contributor(s):: Mark Lundstrom

    Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Fall 2008This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development...

  12. Introduction: Physics of Nanoscale MOSFETs

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

  13. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

  14. Physics of Nanoscale MOSFETs

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

  15. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | | Contributor(s):: Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.

  16. Cylindrical CNT MOSFET Simulator

    22 Jul 2008 | | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom

    Simulate 2-D electrons transport in CNTFET

  17. Quantum and Semi-classical Electrostatics Simulation of SOI Trigates

    19 Feb 2008 | | Contributor(s):: Hyung-Seok Hahm, Andres Godoy

    Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure

  18. The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors

    03 Aug 2007 | | Contributor(s):: Dave Lyzenga

    In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...

  19. The Transistor

    11 Dec 2006 | | Contributor(s):: Victor Hugo Estrada Rivera, Elizabeth Gardner

    This is the third contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.This PowerPoint presentation describes a brief history of how the transistor was developed, how a transistor works and its possible applications. It is at...