ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Guest lecturer: Muhammad A. Alam.

https://nanohub.org/resources/5861

ECE 612 Lecture 19: Device Variability

14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

https://nanohub.org/resources/5856

ECE 612 Lecture 18A: CMOS Process Steps

12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Unit Process Operations, 2) Process Variations.

https://nanohub.org/resources/5788

ECE 606: Principles of Semiconductor Devices

12 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors …

https://nanohub.org/resources/5749

Lecture 2: Thresholds, Islands, and Fractals

04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via …

https://nanohub.org/resources/5698

Lecture 1: Percolation in Electronic Devices

04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity …

https://nanohub.org/resources/5697

ECE 612 Lecture 17: Gate Resistance and Interconnects

03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

https://nanohub.org/resources/5700

Percolation Theory

03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or …

https://nanohub.org/resources/5660

ECE 612 Lecture 16: MOSFET Leakage

31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

https://nanohub.org/resources/5688

ECE 612 Lecture 15: Series Resistance (and effective channel length)

29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

https://nanohub.org/resources/5675

ECE 612 Lecture 14: VT Engineering

28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in modern …

https://nanohub.org/resources/5670

ECE 612 Lecture 12: 2D Electrostatics

28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Consequences of 2D electrostatics, 2) 2D Poisson equation, 3) Charge sharing model, 4) Barrier lowering, 5) 2D capacitor model, 6) Geometric screening length, 7) Discussion, 8) …

https://nanohub.org/resources/5624

ECE 612 Lecture 11: Effective Mobility

20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review of mobility, 2) “Effective”mobility, 3) Physics of the effective mobility, 4) Measuring effective mobility, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5619

ECE 612 Lecture 8: Scattering Theory of the MOSFET II

08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5368

ECE 612 Lecture 7: Scattering Theory of the MOSFET I

08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5367

ECE 612 Lecture 6: MOSFET IV: Velocity saturation

07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) Bulk charge theory (approximate), 3) Velocity saturation theory, 4) Summary.

https://nanohub.org/resources/5366

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Introduction, 2) Square law theory, 3) PN junction effects on MOSFETs, 4) Bulk charge theory (exact), 5) Summary.

https://nanohub.org/resources/5365

Introductory Comments

29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5502

Lecture 7: Connection to the Bottom Up Approach

23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally …

https://nanohub.org/resources/5314

Lecture 6: Quantum Transport in Nanoscale FETs

12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture …

https://nanohub.org/resources/5313