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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
ECE 612 Lecture 17: Gate Resistance and Interconnects
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03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Gate Resistance,
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03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon-...
ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gate-induced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Effect on I-V,
2) Series resistance components,
3) Metal-semiconductor resistance,
4) Other series resistance components,
6) Effective Channel Length,
ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,
2) Uniform Doping,
3) Delta-function doping, xC = 0,
4) Delta-function doping, xC > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in...
ECE 612 Lecture 12: 2D Electrostatics
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Review of mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) Bulk charge theory (approximate),
3) Velocity saturation theory,
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
Outline: 1) Introduction,
2) Square law theory,
3) PN junction effects on MOSFETs,
4) Bulk charge theory (exact),
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
ECE 612 Lecture 4: Polysilicon Gates/QM Effects
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 3A: The Ballistic MOSFET
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.