ECE 612 Lecture 4: Polysilicon Gates/QM Effects

12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) Workfunctionof poly gates, 3) CV with poly depletion, 4) Quantum mechanics and VT, 5) Quantum mechanics and C, 6) Summary.

https://nanohub.org/resources/5364

ECE 612 Introductory Lecture

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

https://nanohub.org/resources/5340

Lecture 3A: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …

https://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

https://nanohub.org/resources/5310

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional …

https://nanohub.org/resources/5207

ECE 612 Lecture 3: MOS Capacitors

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

https://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

https://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review of some fundamentals, 2) Identify next steps.

https://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent …

https://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …

https://nanohub.org/resources/5311

Lecture 5: Application to State-of-the-Art FETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …

https://nanohub.org/resources/5312

Nanoelectronics and the meaning of resistance: Course Handout and Exercises

02 Sep 2008 | Teaching Materials | Contributor(s): Supriyo Datta

Handout with reference list, MATLAB scripts and exercise problems.

https://nanohub.org/resources/5358

ECE 495N Lecture 2: Quantum of Conductance

02 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

https://nanohub.org/resources/5355

ECE 495N Lecture 1: What Makes Current Flow?

28 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta

https://nanohub.org/resources/5345

ECE 495N: Fundamentals of Nanoelectronics

28 Aug 2008 | Courses | Contributor(s): Supriyo Datta

Fall 2008 This is a newly produced version of the course that was formerly available. We would greatly appreciate your feedback regarding the new format and contents. Objective: To convey …

https://nanohub.org/resources/5346

ECE 612: Nanoscale Transistors (Fall 2008)

27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

Fall 2008 This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit …

https://nanohub.org/resources/5328

Introduction: Physics of Nanoscale MOSFETs

26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

https://nanohub.org/resources/5317

2008 NCN@Purdue Summer School: Electronics from the Bottom Up

26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic …

https://nanohub.org/resources/5305

Physics of Nanoscale MOSFETs

26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of …

https://nanohub.org/resources/5306

Lecture 1: Review of MOSFET Fundamentals

26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the …

https://nanohub.org/resources/5307