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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | Papers | Contributor(s): Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts....
Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with...
Directing Crystallization and Assembly for Printed Electronics
19 Dec 2016 | Online Presentations | Contributor(s): Ying Diao
Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using...
A Short Overview of the NEEDS Initiative
06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
Multiscale Modeling of Graphene-Metal Contacts
01 Feb 2016 | Online Presentations | Contributor(s): T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone
IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this...
RF Solid-State Vibrating Transistors
15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...
Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014 | Papers | Contributor(s): Jun Huang
PhD thesis of Jun Huang
Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...
ECE 612 Lecture 9: Subthreshold Conduction
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25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
The Road Ahead for Carbon Nanotube Transistors
09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
[Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors
02 Jun 2013 | Online Presentations | Contributor(s): Xiuling Li
ECE 606 Lecture 27: Looking Back and Looking Forward
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 26: The Future of Computational Electronics
Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service
Engineering Disorder in Opto-Electronics
05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency...
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck