
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultrathin body), 5) Summary.

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008   Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Nanoelectronics and the meaning of resistance: Course Handout and Exercises
02 Sep 2008   Contributor(s):: Supriyo Datta
Handout with reference list, MATLAB scripts and exercise problems.

ECE 495N Lecture 2: Quantum of Conductance
02 Sep 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 1: What Makes Current Flow?
28 Aug 2008   Contributor(s):: Supriyo Datta

ECE 495N: Fundamentals of Nanoelectronics
28 Aug 2008   Contributor(s):: Supriyo Datta
Fall 2008 This is a newly produced version of the course that was formerly available. We would greatly appreciate your feedback regarding the new format and contents. Objective: To convey the basic concepts of nanoelectronics to electrical engineering students with no background in...

ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008   Contributor(s):: Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Fall 2008This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development...

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008   Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

Physics of Nanoscale MOSFETs
26 Aug 2008   Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008   Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

Cylindrical CNT MOSFET Simulator
22 Jul 2008   Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2D electrons transport in CNTFET

Quantum and Semiclassical Electrostatics Simulation of SOI Trigates
19 Feb 2008   Contributor(s):: HyungSeok Hahm, Andres Godoy
Generate quantum/semiclassical electrostatic simulation results for a simple Trigate structure

The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube FieldEffect Transistors
03 Aug 2007   Contributor(s):: Dave Lyzenga
In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical fieldeffect transistor (FET) design is an important first step toward...

The Transistor
11 Dec 2006   Contributor(s):: Victor Hugo Estrada Rivera , Elizabeth Gardner
This is the third contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.This PowerPoint presentation describes a brief history of how the transistor was developed, how a transistor works and its possible applications. It is at...