Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

Resources (1-20 of 293)

  1. ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)

    04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)

    Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

  2. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

  3. 2010 Honorary Symposium for Professor Milton Feng at The Micro and Nano Technology Laboratory UIUC

    23 Jul 2010 | | Contributor(s):: Rashid Bashir, Andreas Cangellaris, Omar N Sobh

    Symposium honoring Professor Milton Feng on his 60th birthday.

  4. 2010 MNTL UIUC Symposium Lecture 1 - Milton Feng at 60 : The Metamorphosis of the Transistor into a Laser

    09 Aug 2010 | | Contributor(s):: Nick Holonyak, Jr

  5. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    18 Jan 2011 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  6. 25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz

    21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh

    The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.

  7. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  8. ABACUS Bipolar Junction Transistors (Spring 2022)

    08 Jun 2022 | | Contributor(s):: Gerhard Klimeck

    In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries....

  9. ABACUS Bipolar Junction Transistors (Winter 2021)

    25 Jan 2022 | | Contributor(s):: Gerhard Klimeck

    In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...

  10. ABACUS Tool Suite (Fall 2023)

    19 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    The objective of the recitation series is to enable faculty to enhance existing or new semiconductor classes with interactive simulations.

  11. ABACUS Tool Suite and Bipolar Junction Transistors (Fall 2023)

    18 Oct 2023 | | Contributor(s):: Gerhard Klimeck

    In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries.

  12. Analytical and Numerical Solution of the Double Barrier Problem

    28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

  13. Basics of Compact Model Development

    02 Aug 2014 | | Contributor(s):: Sivakumar P Mudanai

    This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...

  14. Birth of the Transistor: Bell Labs, Purdue, and the Second World War

    02 Feb 2023 | | Contributor(s):: Michael J. Manfra

    Semiconductors at Purdue in the 1940’s and the invention of the transistor at Bell Labs.

  15. BJT Lab: h-Parameters Calculation Exercise

    07 Jul 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...

  16. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  17. Computers in Space: Transistors in the Age of Apollo

    02 Feb 2023 | | Contributor(s):: Ekaterina Babintseva

    The role of transistors in the race to the moon.

  18. Control of Spin Precession in a Datta-Das Transistor Structure

    11 Apr 2011 | | Contributor(s):: Hyun Cheol Koo

    Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...

  19. Cylindrical CNT MOSFET Simulator

    22 Jul 2008 | | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom

    Simulate 2-D electrons transport in CNTFET

  20. Directing Crystallization and Assembly for Printed Electronics

    15 Dec 2016 | | Contributor(s):: Ying Diao

    Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using energy-efficient and high-throughput methods. The solution printability at near ambient conditions enables...