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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
out of 5 stars
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
MOSFET Lab Exercise: Series Resistance and Transistor Breakdown
13 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.
Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.
ECE 495N F08 Exam 2 (Practice)
08 Jul 2009 | | Contributor(s):: Supriyo Datta
ECE 495N F08 Exam 2
ECE 495N F08 Final Exam (Practice)
ECE 495N F08 Final Exam
ECE 495N F08 Exam 1 (Practice)
ECE 495N F08 Exam 1
ECE 495N F08 Homework 6 (Lectures 22-25)
ECE 495N F08 Homework 7 (Lectures 26-31)
ECE 495N F08 Homework 8 (Lectures 32-35)
ECE 495N F08 Homework 9 (Lectures 36-41)
ECE 495N F08 Homework 1 (Lectures 1-3)
07 Jul 2009 | | Contributor(s):: Supriyo Datta
ECE 495N F08 Homework 2 (Lectures 4-6)
ECE 495N F08 Homework 3 (Lectures 7-14)
ECE 495N F08 Homework 4 (Lectures 15-17)