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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
ECE 659 Lecture 7: Hall Effect II
03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
ECE 659 Lecture 6: Hall Effect I
ECE 606 Lecture 3: Elements of Quantum Mechanics
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28 Jan 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Why do we need quantum physics
Formulation of quantum mechanics
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State...
ECE 606 Lecture 2: Geometry of Periodic Crystals
Volume & surface issues for BCC, FCC, Cubic lattices
Important material systems
Helpful software tool: Crystal Viewer in the ABACUS tool suite.
ECE 606 Lecture 1: Introduction
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Current flow in semiconductors
Types of material systems
Classification of crystals
ECE 659 Quantum Transport: Atom to Transistor
27 Jan 2009 | Courses | Contributor(s): Supriyo Datta
This is a newly produced version of the course that was
We would greatly appreciate your feedback regarding the new format and contents.
ECE 659 Lecture 5: Where is the Resistance?
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27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
ECE 659 Lecture 4: Landauer Model
ECE 659 Lecture 1: Introduction
21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
ECE 659 Lecture 3: Mobility
ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2. General solution,
3. VTF vs. VGB,
4. Subthreshold slope,
5. Double gate (DG) SOI,
ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
4) Circuit performance,
This lecture is an overview of CMOS circuits. For a more detailed presentation, the...
ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 606 Lecture 26: Schottky Diode II
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 612 Lecture 19: Device Variability
14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Sources of variability,
2) Random dopantfluctuations (RDF),
3) Line edge roughness (LER),
4) Impact on design.