Tags: transistors

Description

A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.

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  1. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

  2. Engineering Disorder in Opto-Electronics

    05 Dec 2012 | | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  3. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  6. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  7. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  8. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

    17 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  9. ECE 606 Lecture 19: Bipolar Transistors Design

    17 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  10. ECE 606 Lecture 18: Bipolar Transistors a) Introduction b) Design

    05 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  11. ECE 606 Lecture 17: Shottky Diode

    29 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  12. ECE 606 Lecture 16: p-n Diode AC Response

    24 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  13. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  14. ECE 606 Lecture 15: p-n Diode Characteristics

    17 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  15. ECE 606 Lecture 13 : Solutions of the Continuity Equations - Analytical & Numerical

    12 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Solid State Devices

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 11: Interface States Recombination/Carrier Transport

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  18. ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  19. ECE 606 Lecture 14: p-n Junctions

    04 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  20. ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations

    30 Sep 2012 | | Contributor(s):: Gerhard Klimeck