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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 |
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
Nanoelectronic Devices, With an Introduction to Spintronics
09 Sep 2010 | | Contributor(s):: Supriyo Datta, Mark Lundstrom
Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
2010 Honorary Symposium for Professor Milton Feng at The Micro and Nano Technology Laboratory UIUC
23 Jul 2010 | | Contributor(s):: Rashid Bashir, Andreas Cangellaris, Omar N Sobh
Symposium honoring Professor Milton Feng on his 60th birthday.
Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...
WALLA Lecture: Electronics, Microelectronics and Nanoelectronics
06 May 2010 | | Contributor(s):: Mark Lundstrom
The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in health, the environment, and energy will be increasingly important. This talk is an introduction to...
The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these...
Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor
02 Mar 2010 | | Contributor(s):: Eric Pop
ECET 499N Lecture 5a: Nanoelectronics III - Datta Lecture Review
19 Feb 2010 | | Contributor(s):: Helen McNally
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Illinois ECE 440: MOS Field-Effect Transistor Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.
Illinois ECE 440: znipolar Junction Transistor (BJT) Homework
This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.
Taxonomy of spintronics (a zoo of devices)
out of 5 stars
02 Nov 2006 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
The presentation deals with classification of logic devices based on electron spin as a computational variable. Requirements for logic devices are reviewed. Specifically we focus on a) concatenability (output of one device can drive another) and b) the complete set of Boolean operators (NOT,...
How to modify Datta’s 1D Matrix Density Matlab code to simulate a germanium pMOS
Closed | Responses: 0
How would one modify Datta’s 1D Matrix Density Matlab code (shown in Quantum transport:Atom to Transistor) in order to simulate a germanium pMOS (the code shown simulates a static 1D Si...
Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
21 Sep 2009 | | Contributor(s):: andrei kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...
Aug 27 2009
The Transistor: From Shockley, Bardeen, and Brattain to single molecules and atoms
ECE 495N F08 Exam 2
08 Jul 2009 | | Contributor(s):: Supriyo Datta