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A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material, with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power, the transistor provides amplification of a signal.More information on Transistor can be found here.
Introduction: Physics of Nanoscale MOSFETs
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26 Aug 2008 | | Contributor(s):: Mark Lundstrom
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
Physics of Nanoscale MOSFETs
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
Lecture 1: Review of MOSFET Fundamentals
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Cylindrical CNT MOSFET Simulator
22 Jul 2008 | | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
Quantum and Semi-classical Electrostatics Simulation of SOI Trigates
19 Feb 2008 | | Contributor(s):: Hyung-Seok Hahm, Andres Godoy
Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure
is it possible to design a bipolar junction transistor using PADRE software?
Closed | Responses: 1
The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors
03 Aug 2007 | | Contributor(s):: Dave Lyzenga
In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...
11 Dec 2006 | | Contributor(s):: Victor Hugo Estrada Rivera, Elizabeth Gardner
This is the third contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.This PowerPoint presentation describes a brief history of how the transistor was developed, how a transistor works and its possible applications. It is at...