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Tigran David Grigoryan
https://nanohub.org/members/315956
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
21 Sep 2020 | | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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Dennis Michael Andrade-Miceli
https://nanohub.org/members/293259
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Mini Course: Searching for the Milli-Volt Switch
17 Apr 2020 | | Contributor(s):: Center for E3S, Sapan Agarwal
Sapan Agarwal, a PhD student at UC Berkeley, leads a mini course on Searching for the Milli-volt Switch. Sapan is a student in the NSF Funded Center for Energy Efficient Electronics Science.
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Nanotechnology in Electronics: An Introduction to the units on LEDs, Thermistors, and Transistors
12 Jan 2020 | | Contributor(s):: Jacyln Murray, NNCI Nano
The purpose of the following group of lab units is to illustrate properties associated with nanotechnology and the electronics industry through utilization of semiconductors. By using macro-examples of actual nano-circuitry, students will understand what is happening on the...
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Moore’s Law Extension and Beyond
19 Nov 2018 | | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | | Contributor(s):: Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with theenvironment. This approach captures important spin properties such as exchange, spin-orbit,...
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I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/1942
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Alex Boehmke
https://nanohub.org/members/175833
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Directing Crystallization and Assembly for Printed Electronics
19 Dec 2016 | | Contributor(s):: Ying Diao
Over the past thirty years, organic semiconductors have emerged as a new class of electronic and photoelectronic materials that are light- weight, flexible and can be manufactured using energy-efficient and high-throughput methods. The solution printability at near ambient conditions enables...
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A Short Overview of the NEEDS Initiative
06 Jun 2016 | | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
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Multiscale Modeling of Graphene-Metal Contacts
01 Feb 2016 | | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone
IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...
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Aniket Balkrishna parab
https://nanohub.org/members/134166
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CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
https://nanohub.org/publications/62/?v=2
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Sun
https://nanohub.org/members/127172
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Baihua Xie
https://nanohub.org/members/117112
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High-Frequency Carbon Nanotube Transistors: A Multi-Scale Simulation Framework
07 Jan 2015 | | Contributor(s):: Martin Claus
The talk gives an overview on a multi-scale simulation framework with which this question can be answered. Methods to study the steady-state and transient quantum and semi-classical transport phenomena in CNTFETs and their application for the optimization of CNTFETs will be discussed. Special...
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The MVS Nanotransistor Model: A Primer
26 Nov 2014 | | Contributor(s):: Mark Lundstrom
In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...
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The MVS Nanotransistor Model: A Case Study in Compact Modeling
26 Nov 2014 | | Contributor(s):: Shaloo Rakheja
In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model....