
PVRDFASP
02 Apr 2019   Contributor(s):: Abdul Rawoof Shaik, Daniel Brinkman', Christian Ringhofer, Igor Sankin, Bedrich Benes, Dmitry Krasikov, Hao Kang, Dragica Vasileska
We introduce a simulator for modeling transport of charge carriers and electrically active defect centers in solar cells by treating them on an equal footing. The details about the solver’s graphical user interface along with numerical algorithms employed are described. The exact...

Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=3

Sebastian Jan Juchnowski
http://nanohub.org/members/197883

Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=2

Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=1

ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012   Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I

Romain Lavieville
http://nanohub.org/members/58404

David A Ramirez
http://nanohub.org/members/55634

DriftDiffusion Modeling and Numerical Implementation Details
01 Jun 2010   Contributor(s):: Dragica Vasileska
This tutorial describes the constitutive equations for the driftdiffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...

Numerical solution of the DriftDiffusion Equations for a diode
01 Jun 2010   Contributor(s):: Dragica Vasileska
This material describes the implementation and also gives the source code for the numerical solution of the DriftDiffusion equations for a PN Diode. The code can be easily generalized for any 2D or 3D device.

ECE 656 Lecture 36: The Course in a Lecture
14 Dec 2009   Contributor(s):: Mark Lundstrom

ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009   Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary

ECE 656 Lecture 10: The DriftDiffusion Equation
30 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Transport in the bulkThe DD equationIndicial notationDD equation with Bfield

From SemiClassical to Quantum Transport Modeling: DriftDiffusion and Hydrodynamic Modeling
10 Aug 2009   Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantummechanically. An indepth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

MOSFet: FirstTime User Guide
13 Jun 2009   Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This firsttime user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOIMOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

PN Junction Lab: FirstTime User Guide
13 Jun 2009   Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This firsttime user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009   Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

PN Junction Lab Demonstration: Asymmetric PN Junctions
11 Jun 2009   Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.

ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
21 Jan 2009   Contributor(s):: Supriyo Datta

a TCAD Lab
29 Oct 2008   Contributor(s):: Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation