Tags: transport/Drift-Diffusion

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  1. PVRD-FASP

    02 Apr 2019 | | Contributor(s):: Abdul Rawoof Shaik, Daniel Brinkman', Christian Ringhofer, Igor Sankin, Bedrich Benes, Dmitry Krasikov, Hao Kang, Dragica Vasileska

    We introduce a simulator for modeling transport of charge carriers and electrically active defect centers in solar cells by treating them on an equal footing.  The details about the solver’s graphical user interface along with numerical algorithms employed are described. The exact...

  2. Stanford 2D Semiconductor (S2DS) Transistor Model

    11 Aug 2018 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=3

  3. Sebastian Jan Juchnowski

    http://nanohub.org/members/197883

  4. Stanford 2D Semiconductor (S2DS) Transistor Model

    04 Apr 2016 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=2

  5. Stanford 2D Semiconductor (S2DS) Transistor Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=1

  6. ECE 656 Lecture 30: Balance Equation Approach I

    09 Feb 2012 | | Contributor(s):: Mark Lundstrom

    This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I

  7. Romain Lavieville

    http://nanohub.org/members/58404

  8. David A Ramirez

    http://nanohub.org/members/55634

  9. Drift-Diffusion Modeling and Numerical Implementation Details

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...

  10. Numerical solution of the Drift-Diffusion Equations for a diode

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This material describes the implementation and also gives the source code for the numerical solution of the Drift-Diffusion equations for a PN Diode. The code can be easily generalized for any 2D or 3D device.

  11. ECE 656 Lecture 36: The Course in a Lecture

    14 Dec 2009 | | Contributor(s):: Mark Lundstrom

  12. ECE 656 Lecture 28: Balance Equation Approach I

    13 Nov 2009 | | Contributor(s):: Mark Lundstrom

    Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary

  13. ECE 656 Lecture 10: The Drift-Diffusion Equation

    30 Sep 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Transport in the bulkThe DD equationIndicial notationDD equation with B-field

  14. From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  15. MOSFet: First-Time User Guide

    13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

  16. PN Junction Lab: First-Time User Guide

    13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley

    This first-time user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...

  17. MOSFet Demonstration: MOSFET Device Simulation and Analysis

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

  18. PN Junction Lab Demonstration: Asymmetric PN Junctions

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.

  19. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  20. a TCAD Lab

    29 Oct 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

    An Assembly of TCAD tools for circuit, device, and process simulation