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Diffusion of holes and electrons
15 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Diffusion is a process of particles distributing themselves from regions of high- to low- concentrations. In semi-classical electronics these particles are the charge carriers (electrons and holes). The rate at which a carrier can diffuse is called diffusion constant with units of cm2/s. The...
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ECE 656 Lecture 36: The Course in a Lecture
14 Dec 2009 | | Contributor(s):: Mark Lundstrom
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ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary
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ECE 656 Lecture 10: The Drift-Diffusion Equation
30 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Transport in the bulkThe DD equationIndicial notationDD equation with B-field
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From Semi-Classical to Quantum Transport Modeling
10 Aug 2009 | | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
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From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling
10 Aug 2009 | | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
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MOSFet: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to MOSFet on nanoHUB. The introduction to MOSFETs and SOI-MOSFETs is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
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PN Junction Lab: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
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MOSFet Demonstration: MOSFET Device Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.
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PN Junction Lab Demonstration: Asymmetric PN Junctions
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a several PN junctions using PN Junction Lab, which is powered by PADRE. Several powerful analytic features of this tool are demonstrated.
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ECE 606 Lecture 16: Carrier Transport
23 Feb 2009 | | Contributor(s):: Muhammad A. Alam
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ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
21 Jan 2009 | | Contributor(s):: Supriyo Datta
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a TCAD Lab
29 Oct 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation
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Physics of Nanoscale MOSFETs
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
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Sambit Palit
Sambit Palit is currently working on thick dielectric reliability and reliability of RF-MEMS devices with Prof. Muhammad Ashraful Alam in the Department of Electrical and Computer Engineering at...
https://nanohub.org/members/30266
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Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
27 Jul 2008 | | Contributor(s):: Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as particle-based device simulators (using Quamc2D).
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MuGFET: First-Time User Guide
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
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Homework Exercise on Drift & Diffusion in Bulk Semiconductors - considerations of lifetime
30 Mar 2008 | | Contributor(s):: Mark Lundstrom, Saumitra Raj Mehrotra
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light. Analytical derivations are requested and considerations of lifetime are considered.NCN@Purdue