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Introduction: Nanoelectronics and the meaning of resistance
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20 Aug 2008 | | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
Lecture 1A: What and where is the resistance?
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Lecture 1B: What and where is the resistance?
Lecture 2A: Quantum Transport
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...
Lecture 2B: Quantum Transport
Lecture 3A: Spin Transport
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
Lecture 3B: Spin Transport
Lecture 4B: Energy Exchange and Maxwell’s Demon
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a “Landauer-like picture” where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
Lecture 5A: Correlations and Entanglement
Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...
Lecture 5B: Correlations and Entanglement
Nanoelectronics and the Meaning of Resistance
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Finite Height Quantum Well: an Exercise for Band Structure
31 Jan 2008 | | Contributor(s):: David K. Ferry
Use the Resonant Tunneling Diodes simulation tool on nanoHUB to explore the effects of finite height quantum wells.Looking at a 2 barrier device, 300 K, no bias, other standard variables, and 3 nm thick barriers and a 7 nm quantum well, determine the energies of the two lowest quasi-bound states.
Electron-Phonon and Electron-Electron Interactions in Quantum Transport
14 Jan 2008 | | Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...
Engineering at the nanometer scale: Is it a new material or a new device?
06 Nov 2007 | | Contributor(s):: Gerhard Klimeck
This seminar will overview NEMO 3D simulation capabilities and its deployment on the nanoHUB as well as an overview of the nanoHUB impact on the community.
Quantum Ballistic Transport in Semiconductor Heterostructures
27 Aug 2007 | | Contributor(s):: Michael McLennan
The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy (MBE), allow for growth of ultra-thin layers of differing material compositions. Structures can be...
Orbital Mediated Tunneling in a New Unimolecular Rectifier
25 May 2007 | | Contributor(s):: Robert Metzger, NCN at Northwestern University
In 1997 we showed that hexadecylquinolinium tricyanoquinodimethanide is a unimolecular rectifier, by scanning tunneling microscopy and also as a Langmuir-Blodgett (LB) monolayer, sandwiched between Al electrodes. We have now seen rectification in a new molecule: this rectification can be...
Pan American Advanced Study Institute Lectures: Nanodevices and Maxwell’s Demon
14 Jun 2007 | | Contributor(s):: Supriyo Datta
Pan AmericanAdvanced Study Institute (PASI) Lectures: Nanodevices and Maxwell's DemonThis is a video taped set of two one-hour live lectures covering roughly the same material as Lectures 1-3 of Concepts of Quantum Transport.
PASI Lecture: Nanodevices and Maxwell's Demon, Part 2
Pan AmericanAdvanced Study Institute (PASI) Lectures.This is part 2 of a video taped set of two one-hour live lectures covering roughly the same material as Lectures 1-3 of Concepts of Quantum Transport.
PASI Lecture: Nanodevices and Maxwell's Demon, Part 1
13 Jun 2007 | | Contributor(s):: Supriyo Datta
Pan AmericanAdvanced Study Institute (PASI) Lectures.This is part 1 of a video taped set of two one-hour live lectures covering roughly the same material as Lectures 1-3 of Concepts of Quantum Transport.