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18 May 2007 | Tools | Contributor(s): Mincheol Shin
3D Simulator for Silicon Nanowire Field Effect Transistors with Multiple Gates
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
McCoy Lecture: Nanodevices and Maxwell's Demon
04 Oct 2006 | Online Presentations | Contributor(s): Supriyo Datta
This is a video taped live lecture covering roughly the same material as lecture 1 of "Concepts of Quantum Transport". Video only.
CQT Lecture 4: Coulomb blockade and Fock space
30 Nov 2006 | Online Presentations | Contributor(s): Supriyo Datta
Objective: To illustrate the limitations of the model described in Lectures 2, 3 and introduce a completely different approach based on the concept of Fock space. I believe this will be a key …
CQT Lecture 3: Probabilities, Wavefunctions and Green Functions
Objective: To extend the simple model from Lecture 2 into the full-blown model combines the NEGF (Non-Equilibrium Green Function) method with the Landauer approach.
CQT Lecture 2: Electrical Resistance - A Simple Model
Objective: To introduce a simple quantitative model for describing current flow in nanoscalestructures and relate it to well-known large scale properties like Ohm’s Law.
CQT Lecture 1: Nanodevices and Maxwell's Demon
Objective: To illustrate the subtle interplay of dynamics and thermodynamicsthat distinguishes transport physics.
A short overview of this series of four lectures is given.
CQT: Concepts of Quantum Transport
30 Nov 2006 | Courses | Contributor(s): Supriyo Datta
In this series of four lectures (approximately 6 hours total) Supriyo Datta explores the physics of current flow in nanodevices in simple physical terms, stressing clearly what is now known and what …
MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor …
recursive algorithm for NEGF in Matlab
13 Nov 2006 | Downloads | Contributor(s): Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) …
19 May 2006 | Tools | Contributor(s): Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
Fundamentals of Nanoelectronics (Fall 2004)
01 Sep 2004 | Courses | Contributor(s): Supriyo Datta, Behtash Behinaein
Welcome to the ECE 453 lectures. The development of "nanotechnology" has made it possible to engineer material and devices on a length scale as small as several nanometers (atomic distances are ~ …
Resonant Tunneling Diode Simulator
10 Oct 2005 | Tools | Contributor(s): Michael McLennan
Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport
MATLAB Scripts for "Quantum Transport: Atom to Transistor"
15 Mar 2005 | Downloads | Contributor(s): Supriyo Datta
Tinker with quantum transport models! Download the MATLAB scripts used to demonstrate the physics described in Supriyo Datta's book Quantum Transport: Atom to Transistor. These simple models are less …
SEQUAL 2.1 Source Code Download
09 Mar 2005 | Downloads | Contributor(s): Michael McLennan
SEQUAL 2.1 is a device simulation program that computes Semiconductor Electrostatics by Quantum Analysis. Given a device, SEQUAL will compute the electron density and the current density using a …
NanoMOS 2.5 Source Code Download
22 Feb 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy …
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