
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016   Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spinorbitvalley coupling in spin qubits to nonequilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

Auger Generation as an Intrinsic Limit to Tunneling FieldEffect Transistor Performance
22 Sep 2016   Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling fieldeffect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

E304 L6.2.2: Nanoelectrics  Tunneling
04 May 2016 

Illinois ECE 598EP Lecture 12  Hot Chips: Boundary Resistance and Thermometry
17 Jul 2009   Contributor(s):: Eric Pop, Omar N Sobh
Boundary Resistance and ThermometryTopics: Summary of Boundary Resistance Acoustic vs. Diffuse Mismatch Model Band to Band Tunneling Conduction Thermionic and Field Emission(3D) Photon Radiation Limit Photon Conductance of Nanoconstrictions Nanoscale Thermometry Scanning Thermal Microscopy

Lecture 3A: Spin Transport
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...

Lecture 3B: Spin Transport
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...

Lecture 6: Graphene PN Junctions
22 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:IntroductionElectron optics in grapheneTransmission across NP junctionsConductance of PN and NN junctionsDiscussionSummary

ME 597 Lecture 1: Review of Quantum Tunneling/Introduction to STM
01 Sep 2010   Contributor(s):: Ron Reifenberger
Topics:Quantum TunnelingThe STM – basic ideaRecommended Reading: See References below.

ME 597 Lecture 3: Quantum Tunneling/The STM
08 Oct 2009   Contributor(s):: Ron Reifenberger
Topics:Quantum TunnelingThe STM – basic ideaRecommended Reading: See References below.

Modeling of Interribbon Tunneling in Graphene
11 Nov 2016   Contributor(s):: Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE presentation. In this paper we investigate the finitesize effect in nanoscaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].

Nanoelectronic Modeling Lecture 12: Open 1D Systems  Transmission through Double Barrier Structures  Resonant Tunneling
27 Jan 2010   Contributor(s):: Gerhard Klimeck, Dragica Vasileska
This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a quasi bound state, and the bound state can be related to a simple particle in a box calculation.

Nanoelectronic Modeling Lecture 26: NEMO1D 
09 Mar 2010   Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...

Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
09 Mar 2010   Contributor(s):: Gerhard Klimeck
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple leveldrop potential model and a more realistic device using a ThomasFermi potential model.

Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
09 Mar 2010   Contributor(s):: Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, currentvoltage characteristics, and resonance energies. Also demonstrated is a RTD simulation using a ThomasFermi...

NEMO5 Tutorial 6B: Device Simulation  Quantum Transport in GaSb/InAs Tunneling FET
16 Jul 2012   Contributor(s):: Yu He

NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
19 Sep 2016   Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multiscale, multiphysics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org
10 Nov 2016   Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multiscale, multiphysics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...

Outdoing Maxwell’s Demon: Taming Molecular Wildness
11 May 2011   Contributor(s):: Dudley R. Herschbach
This talk describes these developments, illustrating means to analyze and control molecular trajectories and spatial orientation and to select rotational and vibrational states, with applications to elucidating chemical reaction dynamics.

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010   Contributor(s):: Yunfei Gao
A numerical simulation of spindependent quantum transport for a spin field effect transistor(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of bothspin relaxation in the channel and the tunneling barrier between the source/drain and the channel....

The Bardeen Transfer Hamiltonian Approach to Tunneling and its Application to STM/Carbon Nanotubes
05 May 2004   Contributor(s):: Peter M. Albrecht, Kyle Adam Ritter, Laura B. Ruppalt
This presentation covers the Bardeen Transfer Hamiltonian approach to tunneling and its application to STM/carbon nanotubes.