Tags: tunneling

Papers (1-6 of 6)

  1. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    14 Jan 2008 | | Contributor(s):: Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

  2. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

  3. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

    14 Jan 2008 | | Contributor(s):: Gerhard Klimeck

    The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

  4. First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling

    01 Dec 2008 | | Contributor(s):: Kirk H. Bevan

    Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum mechanical phenomena such as wavefunction coupling, surface states, and interface bonds have begun...

  5. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    26 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  6. Quantum Ballistic Transport in Semiconductor Heterostructures

    27 Aug 2007 | | Contributor(s):: Michael McLennan

    The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy (MBE), allow for growth of ultra-thin layers of differing material compositions. Structures can be...