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A UCSD analytic TFET model
18 Dec 2015 | Downloads | Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
Course on Beyond CMOS Computing
06 Jun 2013 | Teaching Materials | Contributor(s): Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of...