Unimore Resistive Random Access Memory (RRAM) Verilog-A Model
22 May 2019 | Compact Models | Contributor(s):
By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1
Università di Modena e Reggio Emilia
The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).
MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Compact Models | Contributor(s):
By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1
1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)
We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and...
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
06 Apr 2016 | Compact Models | Contributor(s):
By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.