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Introduction to Compact Models and Circuit Simulation
21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury
With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.
7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations
23 Aug 2013 | Downloads | Contributor(s): Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy
This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations....
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model...
Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
06 Apr 2016 | Compact Models | Contributor(s):
By Jorge-Daniel Aguirre Morales1, Sébastien Frégonèse2, Chhandak Mukherjee3, Cristell Maneux3, Thomas Zimmer3
1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.