Tags: wide band gap semiconducting materials

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  1. UARK SiC Power MOSFET Model

    22 Feb 2017 | Compact Models | Contributor(s):

    By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1

    University of Arkansas Fayetteville

    A new compact model for SiC power MOSFETs has been presented. The model features an accurate description of the MOS channel, drift region, nonlinear capacitances, and the internal charges. A...


  2. Zhi Tang

    Zhi Tang is currently a research scientist in Beijing Kingway Technology, a high-tech startup founded at Beijing in 2010. He graduated from MechSE department in UIUC with his PhD degree in 2008....