Tags: wide band gap semiconducting materials

All Categories (1-2 of 2)

  1. UARK SiC Power MOSFET Model

    22 Feb 2017 | Compact Models | Contributor(s):

    By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1

    University of Arkansas Fayetteville

    A new compact model for SiC power MOSFETs has been presented. The model features an accurate description of the MOS channel, drift region, nonlinear capacitances, and the internal charges. A...

    http://nanohub.org/publications/152/?v=1

  2. Zhi Tang

    Zhi Tang is currently a research scientist in Beijing Kingway Technology, a high-tech startup founded at Beijing in 2010. He graduated from MechSE department in UIUC with his PhD degree in 2008....

    http://nanohub.org/members/1966