ACUTE—Assembly for Computational Electronics
 Version 43
 by (unknown)
 Version 64
 by (unknown)
Deletions or items before changed
Additions or items after changed
1    [[Image(picture_11.png, 
+  [[Image(picture_11.png, 700px, class=aligncenter)]]


2    +  
3  
4    +  This nanoHUB "topic page" provides an easy access to selected nanoHUB educational material on computational electronics that is openly accessible.


5  
6    +  We invite users to participate in this open source, interactive educational initiative:


7    +  
8  
9    +  * [http://www.nanohub.org/contribute/Contribute content] by uploading it to the nanoHUB. (See "Contribute Content") on the nanoHUB mainpage.


10  +  * Provide feedback for the items you use on the nanoHUB through the review system. (Please be explicit and provide constructive feedback.)


11  +  * Let us know when things do not work by filing a ticket through the nanoHUB "Help" feature on every page.


12  +  * Finally, let us know what you are doing and [http://www.nanohub.org/feedback/suggestions/your suggestions] improving the nanoHUB by using the "Feedback" section, which you can find under "[http://www.nanohub.org/support/ Support]"


13  +  
14  +  Thank you for using the nanoHUB, and be sure to [http://www.nanohub.org/feedback/success_story/share your nanoHUB success stories] with us. We like to hear from you, and our sponsors need to know that the nanoHUB is having impact.


15  
16    [[Image(intro2.png, 250 class=alignleft)]]


17  [[Div(start, class=clear)]][[Div(end)]]  
18  
19    +  The purpose of the ACUTE toolbased curriculum is to introduce interested scientists from academia and industry to the advanced methods of simulation needed for the proper modeling of stateoftheart nanoscale devices. The multiple scale transport in doped semiconductors is summarized in the figure below, in terms of the transport regimes, relative importance of the scattering mechanisms, and possible applications.


20  +  [[Div(start, class=clear)]][[Div(end)]]


21  +  [[Image(intro1.png, 250px, class=alignleft)]]


22  +  [[Image(intro2.png, 250px, class=alignleft)]]


23  +  [[Div(start, class=clear)]][[Div(end)]]


24  +  ACUTE begins with a discussion of the energy band structure that enters as an input to any device simulator. The next section offers a discussion of simulators that involve the driftdiffusion model, and then simulations that involve hydrodynamic and energybalance transport, and conclude the semiclassical transport modeling with application of particlebased device simulation methods.


25  
26    +  After the study and utilization of the semiclassical simulation tools and their applications, the next step includes quantum corrections into the classical simulators. The final set of tools is dedicated to the farfrom equilibrium transport, where the concept of pure and mixed states and the distribution function is introduced. Several tools that utilize different methods will be used for that purpose, such as tools that use the recursive Green’sfunction method and its variant, the Usuki method, as well as the Contact Block Reduction tool, as the most efficient and complete way of solving the quantumtransport problem because this method allows users to simultaneously calculate sourcedrain current and gate leakage (which is not the case, for example, with the Usuki and the recursive Green’s function techniques that are in fact quasi onedimensional in nature for transport through a device). A table that shows the advantages and the limitation of various semiclassical and quantumtransport simulation tools is presented below.


27  
28    [[Image(intro3.png, 
+  [[Image(intro3.png, 250px, class=alignleft)]]

29  [[Div(start, class=clear)]][[Div(end)]]  
30  
31  More details on the actual tool design and information on commercial tool usage can be found on the web pages:  
32  
33  [[Resource(4921)]]  
34  
35  [[Resource(5092)]]  
36    
37  
38  
39  == Energy Bands and Effective Masses ==  
40  
41    === [/tools/acute/ 
+  === [/tools/acute/ Piecewise Constant Potential Barrier Tool in ACUTE]– Open Systems ===

42  +  [[Image(pcpbt.png, 200px, class=alignleft)]]


43  +  The [/tools/acute/ Piecewise Constant Potential Barrier Tool in ACUTE] allows users to calculate the transmission and the reflection coefficient of arbitrary five, seven, nine, eleven and 2nsegment piecewise constant potential energy profile. For the case of a multiwell structure, it also calculates the quasibound states. Thus the Piecewise Constant Potential Tool can be used as a simple demonstration tool for the formation of energy bands.


44  
45    +  Other uses include: 1) in the case of stationary perturbation theory, as an exercise to test the validity of the firstorder and the secondorder correction to the ground state energy of the system due to small perturbations of the confining potential, and 2) as a test of the validity of the Wentzel–Kramers–Brillouin (WKB) approximation for triangular potential barriers.


46    +  
47    +  
48    +  
49    +  
50    +  
51    +  
52    +  
53  
54  Exercises:  
55    
56    [[Div(start, class=clear)]][[Div(end)]]


57  
58  * [[Resource(4831)]]  
59  
60  * [[Resource(4833)]]  
61  
62  * [[Resource(4853)]]  
63  
64  * [[Resource(4873)]]  
65  
66  * [[Resource(5319)]]  
67  
68  * [[Resource(4849)]]  
69  
70  * [[Resource(5102)]]  
71  
72  * [[Resource(5130)]]  
73  
74  [[Div(start, class=clear)]][[Div(end)]]  
75    
76  
77  === [/tools/acute/ Periodic Potential Lab in ACUTE] ===  
78  +  [[Image(ppl.png, 250px, class=alignleft)]]


79  
80    The [/tools/acute/ Periodic Potential Lab in ACUTE] solves the time independent 
+  The [/tools/acute/ Periodic Potential Lab in ACUTE] solves the timeindependent Schrödinger Equation in a onedimensional spatial potential variation. Rectangular, triangular, parabolic (harmonic), and Coulomb potential confinements can be considered. The user can determine energetic and spatial details of the potential profiles, compute the allowed and forbidden bands, plot the bands in a compact as well as an expanded zone, and compare the results against a simple effectivemass parabolic band. Transmission is also calculated. This lab also allows students to become familiar with the reducedzone and expandedzone representation of the dispersion relation (i. e. the Ek relation for carriers).

81    +  
82    +  
83    +  
84    +  
85    and compare the results against a simple effective mass parabolic band. Transmission is also calculated. This 
+  
86  
87  Exercises:  
88  
89  * [[Resource(4851)]]  
90  
91  [[Div(start, class=clear)]][[Div(end)]]  
92  
93  
94    === [/tools/acute/ 
+  === [/tools/acute/ Band Structure Lab in ACUTE] ===

95    +  [[Image(bsl.png, 250px, class=alignleft)]]


96    +  
97  
98    +  In solidstate physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy that an electron is "forbidden" or "allowed" to have. It is due to the diffraction of the quantum mechanical electron waves in the periodic crystal lattice. The band structure of a material determines several characteristics, in particular its electronic and optical properties. The [/tools/acute/ Band Structure Lab in ACUTE] enables the study of bulk dispersion relationships of silicon (Si), gallium arsenide (GaAs), and indium arsenide (InAs). Plotting the full dispersion relation of different materials, students first get familiar with a band structure of direct bandgap (gallium arsenide and indium arsenide) and indirect bandgap semiconductors (silicon). In the case of multiple conduction band valleys, the user has first to determine the Miller indices of one of the equivalent valleys and then from that information it immediately follows, e. g., how many equivalent conduction bands one has in silicon and germanium (Ge).


99    +  
100  
101    In advanced applications, the users can apply tensile and compressive strain and observe the variation in the 
+  In advanced applications, the users can apply tensile and compressive strain and observe the variation in the band structure, bandgaps, and effective masses. Advanced users can also study bandstructure effects in ultrascaled (thin body) quantum wells, and nanowires of different cross sections. Band Structure Lab uses the ''sp3s*d5'' tight binding method to compute dispersion (Ek) for bulk, planar, and nanowire semiconductors.

102  
103  Exercises:  
104  
105  * [[Resource(5201)]]  
106  
107  * [[Resource(5031)]]  
108  
109  * [[Resource(4890)]]  
110  
111  * [[Resource(4880)]]  
112  
113  
114  [[Div(start, class=clear)]][[Div(end)]]  
115  
116  
117  ==DriftDiffusion and Energy Balance Simulations==  
118  
119  
120    === [/tools/acute/ PADRE Tool in ACUTE] 
+  === [/tools/acute/ PADRE Tool in ACUTE]—Modeling of siliconbased devices===

121  +  [[Image(padre.png, 250px, class=alignleft)]]


122  
123    [/tools/acute/ PADRE Tool in ACUTE] is a 
+  [/tools/acute/ PADRE Tool in ACUTE] is a twodimensional/threedimensional simulator for electronic devices, such as MOSFET transistors.

124  
125    +  PADRE Tool in ACUTE is a 2D/3D simulator for electronic devices, such as MOSFETs. With PADRE, users can simulate physical structures of arbitrary geometryincluding heterostructureswith arbitrary doping profiles, which can be obtained using analytical functions or directly from such multidimentional process simulators as Prophet


126    [ 
+  For each electrical bias, [/tools/acute/ PADRE Tool in ACUTE] solves coupled sets of partial differential equations (PDEs). The variety of PDE systems supported in PADRE form a hierarchy of accuracy: 1) electrostatic (Poisson equations), 2) driftdiffusion, including carrier continuity equations, 3) energy balance, including carrier temperature, and 4) electrothermal, including lattice heating.

127  
128    +  Listed below are tools, exercises, and sets of problems that utilize the [/tools/acute/ PADRE Tool in ACUTE]:


129    +  
130    +  
131    +  
132  
133  * [[Resource(229)]]  
134  
135  * [[Resource(4894)]]  
136  
137  * [[Resource(4896)]]  
138  
139  * [[Resource(452)]]  
140  
141  * [[Resource(4906)]]  
142  
143  * [[Resource(3984)]]  
144  
145  * [[Resource(5051)]]  
146  
147    +  Supplemental documentation:


148  
149  * [/site/resources/tools/padre/doc/index.html User Manual]  
150  
151  * [/site/resources/2006/06/01581/intro_dd_padre_word.pdf Abbreviated First Time User Guide]  
152  
153    +  A set of course notes on computational electronics with detailed explanations on band structure, pseudopotentials, numerical issues, and drift diffusion is also available.


154    A set of course notes on 
+  
155  
156  * [[Resource(1516)]]  
157  
158  * [[Resource(980)]]  
159  
160  
161    ===SILVACO 
+  ===SILVACO Simulator—Modeling of SiliconBased and IIIV Devices===

162  
163  In preparation.  
164    
165  
166  
167  == ParticleBased Simulators ==  
168  
169  === [/tools/acute/ Bulk Monte Carlo Lab in ACUTE] ===  
170  +  [[Image(scattering.png, 250px class=alignleft)]]


171  +  [[Image(mc.png, 250px, class=alignright)]]


172  
173    +  The [/tools/acute/ Bulk Monte Carlo Lab in ACUTE] calculates the bulk values of the electron drift velocity, electron average energy, and electron mobility for electric fields applied in arbitrary crystallographic direction in both column 4 (silicon and germanium) and IIIV (gallium arsenide, silicon carbide and gallium nitride) materials. All relevant scattering mechanisms for the materials being considered have been included in the model.


174    +  
175    +  
176    The [/tools/acute/ Bulk Monte Carlo Lab in ACUTE] calculates the bulk values of the electron drift velocity, electron average energy and electron mobility for electric fields applied in arbitrary crystallographic direction in both column 4 ( 
+  
177    +  
178    +  
179    +  
180  
181    Detailed derivation of the scattering rates for most of the scattering mechanisms included in the model can be found on Prof. Vasileska personal website 
+  Detailed derivation of the scattering rates for most of the scattering mechanisms included in the model can be found on Prof. Vasileska personal website <http://www.eas.asu.edu/~vasilesk> (look under class EEE534 Semiconductor Transport). Description of the Monte Carlo method used to solve the Boltzmann Transport Equation and implementation details of the tool are given in the

182  
183  [[Resource(4843)]]  
184  
185    +  An A/V presentation is also available:


186  
187  [[Resource(4439)]]  
188  
189  that gives more insight on the implementation details of the Ensemble Monte Carlo technique for the solution of the Boltzmann Transport Equation. Examples of simulations that can be performed with this tool are given below:  
190  
191  [[Resource(4845)]]  
192  
193  Exercises:  
194  
195  * [[Resource(5047)]]  
196  
197  * [[Resource(5277)]]  
198  
199  * [[Resource(5275)]]  
200  
201  * [[Resource(5321)]]  
202  
203  * [[Resource(5323)]]  
204  
205  
206  === [/tools/acute/ Quamc2D Lab in ACUTE] ===  
207  +  [[Image(quamc2d1.png, 250px, class=alignleft)]] [[Image(quamc2d2.png, 250px, class=alignleft)]]


208  
209    [/tools/acute/ Quamc2D Lab in ACUTE] 
+  [/tools/acute/ Quamc2D Lab in ACUTE]

210  
211    +  QuaMC 2D (pronounced "quamsee") is a quasi threedimensional quantumcorrected semiclassical MonteCarlo transport simulator for conventional and nonconventional MOSFET devices.


212    +  
213  
214    +  A parameterfree quantum field approach has been developed and utilized quite successfully in order to capture the sizequantization effects in nanoscale MOSFETs. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum fieldformalism in which the size of an electron depends upon its energy. This simulator uses different selfconsistent eventbiasing schemes for statistical enhancement in the MonteCarlo device simulations. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the carrier transport process. A bias technique, particularly useful for small devices, is obtained by injection of hot carriers from the boundaries. Regarding the Monte Carlo transport kernel, the explicit inclusion of the longitudinal and transverse masses in the silicon conduction band is realized in the program using the HerringVogt transformation. Intravalley scattering is limited to acoustic phonons. For the intervalley scattering, both g and fphonon processes have been included.


215    +  
216    +  
217    +  
218    +  
219    +  
220    +  
221    A parameterfree quantum field approach has been developed and utilized quite successfully in order to capture the sizequantization effects in nanoscale MOSFETs. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum field formalism in which the size of an electron depends upon its energy. This simulator uses different selfconsistent eventbiasing schemes for statistical enhancement in the MonteCarlo device simulations. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the carrier transport process. A bias technique, particularly useful for small devices, is obtained by injection of hot carriers from the boundaries. Regarding the Monte Carlo transport kernel, the explicit inclusion of the longitudinal and transverse masses in the silicon conduction band is 
+  
222  
223  * [[Resource(4520)]]  
224  
225  * [[Resource(4543)]]  
226  
227  * [[Resource(4443)]]  
228  
229  * [[Resource(4439)]]  
230  
231  * [[Resource(5127)]]  
232  
233  Exercises:  
234    
235  
236  ===Thermal ParticleBased Device Simulator===  
237  
238  In preparation.  
239  
240  +  Exercises and Other Resources:


241  
242    +  * [[Resource(5350)]]


243    +  
244  
245  
246    == 
+  ==Inclusion of Quantum Corrections in Semiclassical Simulation Tools==

247  
248    [/tools/acute/ SCHRED in ACUTE] calculates the envelope wavefunctions and the corresponding boundstate energies in a typical MOS (MetalOxideSemiconductor) or SOS (SemiconductorOxide Semiconductor) structure and a typical SOI structure by solving selfconsistently the onedimensional (1D) Poisson equation and the 1D Schrodinger equation.


249  
250    [[Image(schred.png, 
+  === [/tools/acute/ Schred in ACUTE] ===

251    [ 
+  [[Image(schred.png, 250px, class=alignleft)]]

252  +  [/tools/acute/ Schred in ACUTE] calculates the envelope wavefunctions and the corresponding boundstate energies in a typical MOS (MetalOxideSemiconductor) or SOS (SemiconductorOxide Semiconductor) structure and a typical SOI structure by solving selfconsistently the onedimensional Poisson and Schrödinger equations.


253  
254    To better understand the operation of [/tools/acute/ 
+  To better understand the operation of [/tools/acute/ Schred in ACUTE] and the physics of MOS capacitors please refer to:

255  
256  * [[Resource(4794)]]  
257  
258  * [[Resource(4796)]]  
259  
260  * [[Resource(5087)]]  
261  
262  * [[Resource(5127)]]  
263  
264  Exercises:  
265  
266  * [[Resource(4900)]]  
267  
268  * [[Resource(4902)]]  
269  
270  * [[Resource(4904)]]  
271  
272  
273  === [/tools/acute/ 1D Heterostructure Tool in ACUTE] ===  
274  +  [[Image(1dhet1.png, 180px, class=alignleft)]] [[Image(1dhet2.png, 180px, class=alignleft)]]


275  
276    The [/tools/acute/ 1D Heterostructure Tool in ACUTE] simulates confined states in 
+  The [/tools/acute/ 1D Heterostructure Tool in ACUTE] simulates the confined states in onedimentional heterostructures by selfconsistently calculating their charge based on a quantummechanical description of the onedimensional device. Increased interest in high electron mobility transistors (HEMTs) is due to the eventual limitations reached by scaling conventional transistors. The 1D Heterostructure Tool in ACUTE is a very valuable tool for the design of HEMTs because the user can determine such components as the position and the magnitude of the deltadoped layer, the thickness of the barrier, and the spacer layer, for which the user can maximize the amount of free carriers in the channel, which, in turn, leads to a larger drive current.

277    +  
278    +  
279    +  
280    +  
281  
282  Exercises:  
283  
284  * [[Resource(5231)]]  
285  
286  * [[Resource(5233)]]  
287  
288  
289    The most commonly used semiconductor devices for applications in the GHz range now are 
+  The most commonly used semiconductor devices for applications in the GHz range now are gallium arsenide based MESFETs, HEMTs and HBTs. Although MESFETs are the cheapest devices because they can be realized with bulk material, i.e. without epitaxially grown layers, HEMTs and HBTs are promising devices for the near future. The advantage of HEMTs and HBTs compared to MESFETs is a higher power density (by a factor of two to three), which leads to a significantly smaller chip size.

290    +  
291    +  
292  
293  +  HEMTs are fieldeffect transistors wherein the flow of the current between two ohmic contacts, known as the source and the drain, is controlled by a third contact, the gate. Such gates are usually Schottky contacts. In contrast to ionimplanted MESFETs, HEMTs are based on epitaxial layers with different band gaps.


294  
295  
296  ==Quantum Transport==  
297  
298  
299  === Recursive Green's Function Method for Modeling RTD's===  
300  
301  in preparation.  
302  
303  
304  === [/tools/acute/ nanoMOS in ACUTE] ===  
305  +  [[Image(nanomos.png, 250px, class=alignleft)]]


306  
307    [/tools/acute/ nanoMOS in ACUTE] is a 
+  [/tools/acute/ nanoMOS in ACUTE] is a twodimensional simulator for thin body (less than 5 nm), fully depleted, doublegated nMOSFETs. Five transport models is available (driftdiffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly, and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved selfconsistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles, and currentvoltage (I/V) information can be obtained from the source code.

308  
309    +  [[Resource(1305)]] 3.0 includes an improved treatment of carrier scattering. Some important information about [/tools/acute/ nanoMOS in ACUTE] can be found on the following links:


310    +  
311    +  
312    [[Resource(1305)]] 3.0 includes an improved treatment of carrier scattering. 
+  
313  
314  * [[Resource(2845)]]  
315  
316  * [[Resource(1533)]]  
317  
318  
319  ===CBR===  
320  
321  in preparation.  
322    
323  
324  
325  ==Atomistic Modeling==  
326  
327  
328  === [/tools/acute/ NEMO3D in ACUTE] ===  
329  +  [[Image(modeling_agenda5.gif, 250px, class=alignleft)]] [[Image(qdot.png, 250px, class=alignleft)]]


330  
331    [/tools/acute/ NEMO3D in ACUTE] calculates eigenstates in (almost) arbitrarily shaped semiconductor structures in the typical column IV and IIIV materials. Atoms are represented by the empirical tight binding model using s, sp3s*, or sp3d5s* models with or without spin. Strain is computed using the classical valence force field (VFF) with various Keatinglike potentials.

+  [/tools/acute/ NEMO3D in ACUTE] calculates eigenstates in (almost) arbitrarily shaped semiconductor structures in the typical column IV and IIIV materials. Atoms are represented by the empirical tight binding model using ''s'', ''sp3s*'', or ''sp3d5s*'' models with or without spin. Strain is computed using the classical valence force field (VFF) with various Keatinglike potentials.

332  
333    [ 
+  Users of [/tools/acute/ NEMO3D in ACUTE] can analyze quantum dots, alloyed quantum dots, longrange strain effects on quantum dots, the effects of wetting layers, piezoelectric effects in quantum dots, quantumdot nuclearspin interaction, quantumdot phonon spectra, coupled quantumdot systems, miscut silicon quantum wells with silicongermanium alloy buffers, coreshell nanowires, alloyed nanowires, phosphorous impurities in silicon (P:Si qubits), and buck alloys.

334    +  
335  
336    +  Boundary conditions to treat the effects of surface states have been developed. Direct and exchange interactions and interactions with electromagnetic fields can be computed in a postprocessing approach based on the NEMO 3D single particle states.


337    +  
338    +  
339    +  
340    +  
341    Boundary conditions to treat the effects of 
+  
342  
343  Exercises:  
344  
345  * [[Resource(450)]]  
346  
347  * [[Resource(2925)]]  
348    
349  
350  == Collection of tools that comprise ACUTE ==  
351  
352  [[Resource(4826)]]  
353  
354  [[Resource(3847)]]  
355  
356  [[Resource(1308)]]  
357  
358  [[Resource(941)]]  
359  
360  [[Resource(4438)]]  
361  
362  [[Resource(1092)]]  
363  
364  [[Resource(221)]]  
365  
366  [[Resource(5203)]]  
367  
368  [[Resource(1305)]]  
369  
370  [[Resource(450)]] 