By completing the MOSCap Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, you will be able to:
a) understand operation of Metal-Oxide-Semiconductor using energy band diagrams.
b) study the effect of interface traps, work function, oxide thickness etc on Capacitance-Voltage output.
c) understand MOS-C C-V characteristics in low and high frequency limits.
The specific objectives of the MOSCap Lab are:
Recommended Reading
If you have not had experience with the MOS-C operation , here is a list of resources that will help you have the required knowledge to get the most of these issues resolved:
1. Rober F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley Publishing Company, 2000). (Chapters 16)
Demo
* MOSCap: First-Time User Guide
* MOSCap Demonstration: MOS Capacitor Simulation
Theoretical descriptions
* Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
* Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
* Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
* ECE 606 Lecture 32: MOS Electrostatics I
* ECE 606 Lecture 33: MOS Electrostatics II
* ECE 606 Lecture 34: MOSCAP Frequency Response
* MOS Capacitors: Theory and Modeling
Tool Verification
* Verification of the Validity of the MOSCap Tool
Worked Examples
* MOSCAP Worked out problems (Basic)
Exercises and Homework Assignments
1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
2. Exercise: CV curves for MOS capacitors
Solutions to Exercises
Solutions to exercises will be provided to Instructors ONLY!
Take a Test
* ABACUS: Test for MOSCAP Tool
Solve the Challenge
Coming soon