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By completing the MOSCap Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a Metal-Oxide-Semiconductor using energy band diagrams, b) study the effects of interface traps, work function, oxide thickness, etc. on capacitance-voltage output, and c) understand MOS-C C-V characteristics in low and high frequency limits.


The specific objectives of the MOSCap Lab are:

moscap_scheme.png

Recommended Reading

If you have not had experience with the MOS-C operation , here is a list of resources that will help you have the required knowledge to get the most of these issues resolved:

1. Rober F. Pierret. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley. (See especially chapter 16)

Demo

* MOSCap: First-Time User Guide

* MOSCap Demonstration: MOS Capacitor Simulation

Theoretical Descriptions

* Tutorial_PADRE_Simulation_Tools.pdf (tutorial)

* Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

* Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

* Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

* ECE 606 Lecture 32: MOS Electrostatics I

* ECE 606 Lecture 33: MOS Electrostatics II

* ECE 606 Lecture 34: MOSCAP Frequency Response

* MOS Capacitors: Theory and Modeling

Tool Verification

* Verification of the Validity of the MOSCap Tool

Examples

* MOSCAP Worked out problems (Basic)

Exercises and Homework Assignments

1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges

2. Exercise: CV curves for MOS capacitors

Solutions to Exercises

Solutions are provided only to instructors!

Evaluation

* ABACUS: Test for MOSCAP Tool

Challenge

* MOSCAP CV profiling

Created on , Last modified on

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