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MOSCap Learning Materials

by Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck, Alejandra J. Magana


By completing the MOSCap Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a Metal-Oxide-Semiconductor using energy band diagrams, b) study the effects of interface traps, work function, oxide thickness, etc. on capacitance-voltage output, and c) understand MOS-C C-V characteristics in low and high frequency limits.

The specific objectives of the MOSCap Lab are:


Recommended Reading

Users who are new to the operation of MOS-Caps should consult the following resources:

1. Rober F. Pierret. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley. (See especially chapter 16)


* MOSCap: First-Time User Guide

* MOSCap Demonstration: MOS Capacitor Simulation

Theoretical Descriptions

* Tutorial_PADRE_Simulation_Tools.pdf (tutorial)

* Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

* Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

* Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

* ECE 606 Lecture 32: MOS Electrostatics I

* ECE 606 Lecture 33: MOS Electrostatics II

* ECE 606 Lecture 34: MOSCAP Frequency Response

* MOS Capacitors: Theory and Modeling

Tool Verification

* Verification of the Validity of the MOSCap Tool


* MOSCAP Worked out problems (Basic)

Exercises and Homework Assignments

1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges

2. Exercise: CV curves for MOS capacitors

Solutions to Exercises

Solutions are provided only to instructors!


* ABACUS: Test for MOSCAP Tool


* MOSCAP CV profiling

Created on , Last modified on, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.