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Resonant Tunneling Diode Learning Materials

by Dragica Vasileska, Gerhard Klimeck

By completing the Resonant Tunneling Diode Simulation with NEGF, users will be able to: a) understand the principle of operation of resonant tunneling diode, b) the meaning of the quasibound states, resonant and non-resonant tunneling and c) the concept of quantum interference which is the basis for the formation of quasi-bound states and the operation of a Resonant Tunneling Diode.

The specific objectives of the Resonant Tunneling Diode Module are:


Recommended Reading

Users who are new to the principles of operation of a resonant tunneling diode should consult the following resource:

Hiroshi Mizuta and Tomonori Tanoue,The Physics and Applications of Resonant Tunnelling Diodes (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering).

Theoretical descriptions

* Resonant Tunneling Diode operation

* RTD with NEGF Demonstration: Basic RTD Asymmetric

* NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology

* Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

Exercises and Homework Assignments

1. exercise_rtd.pdf


Solutions to Exercises

Solutions are provided only to instructors!


This test will assess the users conceptual understanding of the physical, mathematical and computational knowledge related to operation of Resonant Tunneling Diodes.


Users are challenged to integrate what they have learned about operation of Resonant Tunneling Diodes.

Resonant Tunneling Diodes: an Exercise

Created on , Last modified on, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.