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== '''This page is under construction ...''' ==
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Test
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{{{
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# Test one
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#!html
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# Test two
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<div style="border: 3px solid #ccc;padding: 0 1em 0 1em;">
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# Test three
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}}}
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[[Image(ASL.jpg, 160px, class=align-left nolink)]]
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Electronic devices have traditionally been based on controlling the flow of charge. However, electrons carry both charge and “spin”, the latter being responsible for magnetic phenomena.
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Another test. Foo. Bar.
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Over the last decade or so, the fields of Spintronics and magnetism have evolved into one large field. This is primarily due to two key experimentally demonstrated phenomena: spin injection into metals/semiconductors from magnetic contacts and spin induced magnetization dynamics of magnets by spin transfer torque.
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These demonstrations suggest an all-spin approach to information processing. Magnets inject spins and spins turn magnets forming a closed “'''''ecosystem'''''” without the need to convert to charge. A recently proposed concept called '''''all spin logic''''' (ASL) uses magnets to represent non-volatile data and communicate between them using spin currents with the energy coming from the power supply.
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More testing. |
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ASL approach to information processing uses a formalism recently developed at Purdue University for integrated spin-magnet circuits. This approach is particularly powerful in that it combines various spin related phenomena such as spin-injection, spin-transport and spin-detection with that of magnet dynamics into one unified '''''spin-circuit''''' theory. This formalism does not use approximations in defining the elements of the spin-magnet circuit as usually done in defining compact models. At the same time, it is capable of modeling integrated circuits composed of many magnets interconnected with spin-coherent interconnects.
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Learn more about the ASL approach to information processing from the resources available on this site, listed below.
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==== Research Publications ====
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* B. Behin-Aein, D. Datta, S. Salahuddin and S. Datta, "Proposal for and all-spin logic device with built-in memory"
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[http://www.nature.com/nnano/journal/v5/n4/abs/nnano.2010.31.html Nature Nanotechnology ''5'', 266 - 270 (2010)
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