MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
05 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org …
http://nanohub.org/resources/13059