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Teaching Materials 2 results (feed)

  1. MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)

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    05 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones

    The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org …

    http://nanohub.org/resources/13057

  2. MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

    This resource has a 0.0 Ranking

    Ranking is calculated from a formula comprised of user reviews and usage data. Learn more ›

    Reviews & Citations
    Google/IEEE
    Avg. Review: 0.0 out of 5 stars
    Citations:

    05 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones

    The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org …

    http://nanohub.org/resources/13059

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