By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b) the limitations of the gradual channel approximation, and c) the limitations of the drift-diffusion model.
The specific objectives of the MOSFET Lab are:
Users who are new to the operation and modeling of MOSFET devices should consult the following resources:
1. Michael Shur. (1990). Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice Hall.
2. Simon M. Sze and Kwok K. Ng. (2007). Physics of Semiconductor Devices. 3rd ed. Hoboken, NJ: Wiley.
3. Dragica Vasileska, Stephen M. Goodnick and G. Klimeck. (2010). Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation. Boca Raton, LA: CRC Press.
* Tutorial_PADRE_Simulation_Tools.pdf (tutorial)
Exercises and Homework Assignments
Solutions to Exercises
Work in progress!
This test will assess users’ conceptual understanding of the physical, mathematical and computational knowledge related to operation of MOSFET devices.
In this final challenge users will integrate what they have learned about the operation of MOSFET devices.