OMEN Nanowire Lab Learning Materials
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| 1 | [[Image(omenwire_topic_image.PNG, 500px)]] | |||
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| 3 | By completing the OMEN Nanowire Lab, you will be able to: | |||
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| 5 | a) understand the operation of nanowire FETs, | |||
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| 7 | b) effect of bandstructure on the carrier transport in nanowire FETs, | |||
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| 9 | c) effect of geometry of nanowire on the drain current characteristics in nanowire FETs | |||
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| 11 | The specific objectives of the OMEN Nanowire Lab are: | |||
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| 13 | [[Image(omenwire_scheme.png, 500px)]] | |||
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| 15 | == Recommended Reading == | |||
| 16 | Following materials introduce the concept of nanowire FETs and the simulation methods that are useful to understand thier characterstics: | |||
| 17 | - | * [/resources/5328 Mark Lundstrom, Nanoscale Transistors] for a basic understanding on MOS transistors.
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+ | * [/resources/5328 Mark Lundstrom, Nanoscale Transistors(ECE612 2008)] for a basic understanding on MOS transistors.
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| 18 | * [/resources/4059 Joerg Appenzeller, What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?] | |||
| 19 | * [/resources/1639 Timothy Sands, Nanotubes and Nanowires: One-dimensional Materials] | |||
| 20 | * [/resources/1715 Monica Taba, Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs] | |||
| 21 | * Mark Lundstrom, Nanoscale Transistors: Device Physics, Modeling and Simulation, Springer (Chapter 5) | |||
| 22 | + | * [/resources/8803 Threshold voltage]
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| 23 | + | * [/resources/1823 Mark Lundstrom Subthreshold conduction (ECE612 2006)]
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| 24 | ||||
| 25 | == Demo == | |||
| 26 | * [/resources/6833 OMEN Nanowire: Video Demo] | |||
| 27 | * [/resources/6318/ OMEN Nanowire: First Time User Guide] | |||
| 28 | * [/resources/6315/ Supporting Document – Limitation of the Tool at Large Gate Voltage] | |||
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| 30 | == Theoretical Descriptions == | |||
| 31 | * [http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1155&context=nanopub Mathieu Luisier, et al., Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations, Physical Review B 74, 205323, 2006] | |||
| 32 | * [http://e-collection.ethbib.ethz.ch/view/eth:29339 Mathieu Luisier, Quantum transport beyond the effective mass approximation, ph.D. thesis, ETH, 2007] | |||
| 33 | * [/resources/1792 Mathieu Luisier, Quantum Transport for Nanostructures] | |||
| 34 | * [/resources/9122 Dragica Vasileska, et al., Tight-Binding Bandstructure Calculation Method] | |||
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| 36 | == Tool Verification == | |||
| 37 | * [https://engineering.purdue.edu/gekcogrp/research-group/AbhijeetPaul/project3.php#content Benchmarking Top-of-the-Barrier Model by Abhijeet et al.] | |||
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| 39 | == Worked Examples == | |||
| 40 | * [/resources/6318/ First time user guide slide 15-18] | |||
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| 42 | == Homework == | |||
| 43 | * [/resources/10512 OMEN Nanowire Homework Problems] | |||
| 44 | ||||
| 45 | == Solutions to Exercises == | |||
| 46 | * Solutions to exercises are provided to Instructors ONLY! | |||
| 47 | ||||
| 48 | == Take a Test == | |||
| 49 | * [/resources/10515 OMEN Nanowire Test Problems] | |||
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| 51 | == Solve the Challenge == | |||
| 52 | * [/resources/10764 OMEN Nanowire: solve the challenge] | |||