By completing the Resonant Tunneling Diode Simulation with NEGF, users will be able to: a) understand the principle of operation of resonant tunneling diode, b) the meaning of the quasibound states, resonant and non-resonant tunneling and c) the concept of quantum interference which is the basis for the formation of quasi-bound states and the operation of a Resonant Tunneling Diode.

The specific objectives of the Resonant Tunneling Diode Module are:

## Recommended Reading

Users who are new to the principles of operation of a resonant tunneling diode should consult the following resource:

Hiroshi Mizuta and Tomonori Tanoue,The Physics and Applications of Resonant Tunnelling Diodes (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering).

## Theoretical descriptions

* Resonant Tunneling Diode operation

* RTD with NEGF Demonstration: Basic RTD Asymmetric

* NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology

* Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

## Exercises and Homework Assignments

1. Exercise: Resonant Tunneling Diode

## Solutions to Exercises

Solutions are provided only to instructors!

## Evaluation

This test will assess the users conceptual understanding of the physical, mathematical and computational knowledge related to operation of Resonant Tunneling Diodes.

RTD Topic Page: Test for Resonant Tunneling Diode

## Challenge

Users are challenged to integrate what they have learned about operation of Resonant Tunneling Diodes.