Wish List - Resource ID 5203: Wish #91

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Ravi Kumar Chintalpudi

Oxide layer and metal layers should be included

Since the surface of GaAs is not pure GaAs and a native oxide is always present on the surface it would be useful to observe the effect of and oxide sitting on top of the quantum structure. Similarly for MESFET applications, it would be useful to have a metal directly sitting on the GaAs and its effect on the band structure.

Comments (1)

  1. John Watson

    Typically in simulations the oxide is accounted for by a .7V or .8V Shottky barrier at the surface – this generally provides good agreement between simulation and experimentally measured electron densities in GaAs/AlGaAs heterostructures.

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