Ravi Kumar Chintalpudi at on
Oxide layer and metal layers should be included
Since the surface of GaAs is not pure GaAs and a native oxide is always present on the surface it would be useful to observe the effect of and oxide sitting on top of the quantum structure. Similarly for MESFET applications, it would be useful to have a metal directly sitting on the GaAs and its effect on the band structure.
John Watson at on
Typically in simulations the oxide is accounted for by a .7V or .8V Shottky barrier at the surface – this generally provides good agreement between simulation and experimentally measured electron densities in GaAs/AlGaAs heterostructures.
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